ZXMN2AM832

ISSUE 3 - JANUARY 2005

4

SEMICO NDUC TORS

PARAMETER

SYMBOL

MIN.

TYP.

MAX.

UNIT CONDITIONS.

STATIC

Drain-Source Breakdown Voltage

20

V

Zero Gate Voltage Drain Current

1

Gate-Body Leakage

100

nA

Gate-Source Threshold Voltage

0.7

V

I

D

Static Drain-Source On-State

Resistance

(1)

0.09

0.12

0.30

Forward Transconductance

(3)

6.2

S

DYNAMIC

(3)

Input Capacitance

299

pF

f=1MHz

Output Capacitance

60

pF

Reverse Transfer Capacitance

33

pF

SWITCHING

(2) (3)

Turn-On Delay Time

2.31

ns

Rise Time

2.60

ns

Turn-Off Delay Time

1.55

ns

Fall Time

1.31

ns

Total Gate Charge

3.1

nC

Gate-Source Charge

0.7

nC

Gate-Drain Charge

1.0

nC

SOURCE-DRAIN DIODE

Diode Forward Voltage

(1)

0.9

0.95

V

Reverse Recovery Time

(3)

23

ns

di/dt= 100A/ s

Reverse Recovery Charge

(3)

5.65

nC

NOTES

(1) Measured under pulsed conditions. Width

300 s. Duty cycle

2%.

(2) Switching characteristics are independent of operating junction temperature.

(3) For design aid only, not subject to production testing.

Not Recommended for New Design

Please Use ZXMN2AMCTA