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STF13NM60N-H датащи(PDF) 1 Page - STMicroelectronics |
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STF13NM60N-H датащи(HTML) 1 Page - STMicroelectronics |
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1 / 13 page ![]() January 2010 Doc ID 16963 Rev 1 1/13 13 STF13NM60N-H N-channel 600 V, 0.28 Ω, 11 A MDmesh™ II Power MOSFET in TO-220FP Features ■ 100% avalanche tested ■ Low input capacitance and gate charge ■ Low gate input resistance Application ■ Switching applications Description This series of devices implements second generation MDmesh™ technology. This revolutionary Power MOSFET associates a new vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters. Figure 1. Internal schematic diagram Type VDSS (@Tjmax) RDS(on) max ID STF13NM60N-H 650 V < 0.36 Ω 11 A TO-220FP 1 2 3 Table 1. Device summary Order codes Marking Packages Packaging STF13NM60N-H(1) 13NM60N TO-220FP Tube 1. The device meets ECOPACK® standards, an environmentally-friendly grade of products commonly referred to as “halogen-free” . See Section 4: Package mechanical data. www.st.com Obsolete Product(s) - Obsolete Product(s) |
Аналогичный номер детали - STF13NM60N-H |
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Аналогичное описание - STF13NM60N-H |
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