ZXT14P40DXTC datasheet(4/6 Pages) DIODES

номер детали	ZXT14P40DXTC

подробное описание детали	40V PNP SILICON LOW SATURATION SWITCHING TRANSISTOR

PDF	6 Pages

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производитель	DIODES [Diodes Incorporated]

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ISSUE 1 - MARCH 2000

ZXT14P40DX

ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).

PARAMETER

SYMBOL

MIN.

TYP.

MAX.

UNIT

CONDITIONS.

Collector-Base Breakdown

Voltage

V(BR)CBO

-50

-110

IC=-100 A

Collector-Emitter Breakdown

Voltage

V(BR)CEO

-40

-90

IC=-10mA*

Emitter-Base Breakdown Voltage

V(BR)EBO

-7.5

-8.5

IE=-100 A

Collector Cut-Off Current

ICBO

-100

VCB=-40V

Emitter Cut-Off Current

IEBO

-100

VEB=-6V

Collector Emitter Cut-Off Current

ICES

-100

VCES=-40V

Collector-Emitter Saturation

Voltage

VCE(sat)

-10

-100

-45

-105

-130

-15

-125

-55

-130

-160

IC=-0.1A, IB=-10mA*

IC=-1A, IB=-20mA*

IC=-1A, IB=-50mA*

IC=-4A, IB=-400mA*

IC=-4A, IB=-200mA*

Base-Emitter Saturation Voltage

VBE(sat)

-1.0

IC=-4A, IB=-200mA*

Base-Emitter Turn-On Voltage

VBE(on)

-0.85

IC=-4A, VCE=-2V*

Static Forward Current Transfer

Ratio

hFE

300

200

500

450

380

100

900

IC=-10mA, VCE=-2V*

IC=-1A, VCE=-2V*

IC=-4A, VCE=-2V*

IC=-8A, VCE=-2V*

Transition Frequency

185

MHz

IC=-300mA, VCE=-10V

f=-30MHz

Output Capacitance

Cobo

VCB=-10V, f=1MHz

Turn-On Time

t(on)

130

VCC=-10V, IC=-4A

IB1=IB2=-100mA

Turn-Off Time

t(off)

435

*Measured under pulsed conditions. Pulse width=300

µs. Duty cycle ≤ 2%

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