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ZXTAM322TC датащи(PDF) 4 Page - Diodes Incorporated

номер детали ZXTAM322TC
подробное описание детали  15V NPN LOW SATURATION TRANSISTOR
PDF  6 Pages
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производитель  DIODES [Diodes Incorporated]
домашняя страница  http://www.diodes.com
Logo DIODES - Diodes Incorporated

ZXTAM322TC датащи(HTML) 4 Page - Diodes Incorporated

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ZXTAM322
ISSUE 2 - JUNE 2002
4
PARAMETER
SYMBOL
MIN.
TYP.
MAX.
UNIT
CONDITIONS.
Collector-Base Breakdown
Voltage
V(BR)CBO
40
70
V
IC=100 A
Collector-Emitter Breakdown
Voltage
V(BR)CEO
15
18
V
IC=10mA*
Emitter-Base Breakdown Voltage
V(BR)EBO
7.5
8.2
V
IE=100 A
Collector Cut-Off Current
ICBO
25
nA
VCB=32V
Emitter Cut-Off Current
IEBO
25
nA
VEB=6V
Collector Emitter Cut-Off Current
ICES
25
nA
VCES=12V
Collector-Emitter Saturation
Voltage
VCE(sat)
8
70
165
240
200
14
100
200
280
mV
mV
mV
mV
mV
IC=0.1A, IB=10mA*
IC=1A, IB=10mA*
IC=3A, IB=50mA*
IC=4.5A, IB=50mA*
IC=4.5A, IB=100mA*
Base-Emitter Saturation Voltage
VBE(sat)
0.94
1.0
V
IC=4.5A, IB=50mA*
Base-Emitter Turn-On Voltage
VBE(on)
0.88
0.95
V
IC=4.5A, VCE=2V*
Static Forward Current Transfer
Ratio
hFE
200
300
200
150
415
450
320
240
80
IC=10mA, VCE=2V*
IC=0.2A, VCE=2V*
IC=3A, VCE=2V*
IC=5A, VCE=2V*
IC=12A, VCE=2V*
Transition Frequency
fT
80
120
MHz
IC=50mA, VCE=10V
f=100MHz
Output Capacitance
Cobo
30
40
pF
VCB=10V, f=1MHz
Turn-On Time
t(on)
120
ns
VCC=10V, IC=1A
IB1=IB2=10mA
Turn-Off Time
t(off)
160
ns
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
*Measured under pulsed conditions. Pulse width=300
µs. Duty cycle ≤ 2%
OBSOLETE - PLEASE USE ZXTN617MA



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