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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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AS081C200W датащи(PDF) 1 Page - Roithner LaserTechnik GmbH |
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AS081C200W датащи(HTML) 1 Page - Roithner LaserTechnik GmbH |
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1 / 2 page  20.09.2010 AS081C200W 1 of 2 AS081C200W TECHNICAL DATA High Power Stacked Infrared Laser Diode Array Features Applications • Output Power: 200 W • 780-830 nm Emission Wavelength • Spectral Width: ≤4 nm • High Reliability, High Efficiency • CW stack arrays adopt micro-channel package • Laser Pumping • Medical Usage • High power laser diode applications Specifications (25°C) Item Symbol Value Unit Optical Specifications CW Output Power PO 200 W Output Power / Bar PS 40 W Array Length L 10 mm Center Wavelength λC 780-830 nm Wavelength Tolerance ± 5 nm Spectral Width Δλ ≤ 4 nm Package Style Micro Channel Bar Length 2.4 mm Number of Bars 5 Wavelength Temperature Coefficient 0.3 nm/°C Beam Divergence θ┴×θ║ 40x8 deg Electrical Specifications Slope Efficiency ES ≥ 1 W/A Conversion Efficiency NS ≥ 40% Threshold Current ITH ≤ 12 A Operating Current IF ≤ 52 A Operating Voltage UF ≤ 10 V Absolute Maximum Ratings Reverse Voltage UR 2.5 V Operating Temperature TOP +10 … +40 °C Storage Temperature TSTG -40 ... +85 °C |
Аналогичный номер детали - AS081C200W |
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Аналогичное описание - AS081C200W |
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