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2DA1971 датащи(PDF) 2 Page - Diodes Incorporated |
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2DA1971 датащи(HTML) 2 Page - Diodes Incorporated |
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2 / 7 page ![]() 2DA1971 Document number: DS35669 Rev: 2 – 2 2 of 7 www.diodes.com August 2012 © Diodes Incorporated 2DA1971 Maximum Ratings (@TA = +25°C, unless otherwise specified.) Characteristic Symbol Value Unit Collector-Base Voltage VCBO -400 V Collector-Emitter Voltage VCEO -400 V Emitter-Base Voltage VEBO -7 V Continuous Collector Current IC -0.5 A Peak Pulse Current ICM -1 A Base Current IB -250 mA Thermal Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic Symbol Value Unit Power Dissipation (Note 5) PD 1.5 W Thermal Resistance, Junction to Ambient (Note 5) RθJA 83 °C/W Thermal Resistance, Junction to Leads (Note 6) RθJL 10.4 °C/W Operating and Storage Temperature Range TJ, TSTG -55 to +150 °C ESD Ratings (Note 7) Characteristic Symbol Value Unit JEDEC Class Electrostatic Discharge - Human Body Model ESD HBM ≥ 8,000 V 3B Electrostatic Discharge - Machine Model ESD MM ≥ 400 V C Notes: 5. For a device surface mounted on 25mm X 25mm FR4 PCB with high coverage of single sided 1 oz copper, in still air conditions. 6. Thermal resistance from junction to solder-point (at the end of the collector lead). 7. Refer to JEDEC specification JESD22-A114 and JESD22-A115. |
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