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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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ACT36X датащи(PDF) 7 Page - Active-Semi, Inc |
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ACT36X датащи(HTML) 7 Page - Active-Semi, Inc |
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7 / 22 page  -7- PSR PSR PSR TM Active High Efficiency AC/DC Primary Switching Solutions ACT364 5V/1000MA CHARGER Bill of Materials Transformer Specitication Build up Note:1.SH1,SH2 are shielding; P1 & P2 are primary and S1 is secondary.(Bobbin:EPC13) Electrical specifications Item Description Condition Limits 1 Electrical Strength 50Hz, 1 minute, from primary and secondary 3000Vac 2 P1 Inductance Inductance between pins 1 and 4 at 1Vac & 1kHz 1.75mH± 7 % 3 P1 Leakage Inductance Inductance between pins 1 and 4 with pins 2-3 and 6-10 shorted 75µH PCB Top and Bottom Layers Typical Performance Characteristics STANDBY POWER EFFICIENCY CC/CV CURVE EVALUATION KITS Vin Vo Io ACT364_00_1 85-264Vac 4.75-5.25V 1000-1300mA Wind- ing Terminal Turns Wire Insulation Start Fin- ish Type Size*QTY Layer Thick/Wide Lay er P1 4 --> 49 2UEW 0.12Φ*1 1 0.025*8.5W < -- < -- 49 2UEW 0.12Φ*1 1 0.025*8.5W --> 1 49 2UEW 0.12Φ*1 1 0.025*8.5W SH1 2 NC 49 2UEW 0.12Φ*1 1 0.025*8.5W P2 2 3 24 2UEW 0.12Φ*1 1 0.025*8.5W 1 S1 10 6 9 TEX-E 0.40Φ*1 1 0.025*8.5W 2 SH2 2 Core 1 3 REF DESCRIPTION MFTR C1 Capacitor, Electrolytic, 4.7µF/400V,8 ×12mm Koshin C2 Capacitor, Electrolytic, 6.8µF/400V,8 ×12mm Koshin C3 Capacitor, Ceramic,1000pF/500V,1206,SMD POE C4 Capacitor, Ceramic,4.7uF/35V,0805,SMD POE C5,C6 Capacitor, Solid, 330µF/6.3V, 6.3 ×9mm KSC C9 Capacitor, Ceramic,1000pF/50V,0805,SMD POE BD1 Bridge,B6S,600V/0.5A,MDI,SMD PANJIT D5,D6 Diode, Ultra Fast, RS1M,1000V/1.0A, SMA Good-Ark D8 Diode, Schottky, 40V/3A, SK34, SMB Good-Ark L1 Axial Inductor, 1.5mH, 0410, DIP Amode Tech Q1 Transistor, NPN, 700V,1.5A, D13003, TO-251AB Huawei PCB1 PCB, L*W*T=42x28 x1.0mm, FR-4,Rev:ACT364_00_1 Jintong FR1 Fusible Resistor, 1W, 10Ω, 5% TY-OHM R1,R4 Chip Resistor, 22Ω, 0805, 5% TY-OHM R2 Chip Resistor, 470Ω, 0805, 5% TY-OHM R3 Chip Resistor, 750k Ω, 0805, 5% TY-OHM R5 Chip Resistor, 61k Ω, 0805, 1% TY-OHM R6 Chip Resistor, 11. 8kΩ, 0805, 1% TY-OHM R7,R8 Chip Resistor, 5.1MΩ, 0805, 5% TY-OHM R9 Chip Resistor, 1.07Ω, 1206, 1% TY-OHM R10 Chip Resistor, 162k, 0805, 5% TY-OHM R11 Chip Resistor, 1.1k, 0805, 5% TY-OHM R13 Chip Resistor, 10Ω, 0805, 5% TY-OHM R14 Bead, GZ2012D121,0805 KC T1 Transformer, LP = 1.75mH±7%, EPC13 U1 IC, ACT364US-T, SOT23-6 Active-Semi 0.00 20.00 40.00 60.00 80.00 100.00 120.00 90 115 230 264 Input Voltage (VAC) Standby Power Vs Input Voltage 0.00 1.00 2.00 3.00 4.00 5.00 6.00 0 100 200 300 400 500 600 700 800 900 1000 1100 1200 1300 1400 Output Current(mA) V-I Characteristic Vs Vin(25℃) 90V 115V 230V 264V High limit Low limit |
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