BAS116 datasheet(1/3 Pages) CDIL

номер детали	BAS116

подробное описание детали	SILICON PLANAR SWITCHING DIODE

PDF	3 Pages

Scroll/Zoom	100%

производитель	CDIL [Continental Device India Limited]

домашняя страница	http://www.cdilsemi.com

Logo

1 / 3 page

SILICON PLANAR SWITCHING DIODE

BAS116

SOT-23

Formed SMD Package

Marking

BAS116 =JV

Low Leakage Applications

ABSOLUTE MAXIMUM RATINGS

DESCRIPTION

SYMBOL

UNIT

Continuous Reverse Voltage

VR

V

Repetitive Peak Reverse Voltage

VRRM

V

Forward Current (DC)

IF

mA

Non Repetitive Peak Surge Forward

Current

t=1

µµs

IFSM

A

t=1s

IFSM

A

Power Dissipation at Ta=54ºC

PD

mW

Junction Temperature

Tj

oC

Storage Temperature Range

Tstg

oC

Thermal Resistance

Junction to Soldering Point

*Rth (j-s)

K/W

*For calculation of Rth (j-a) please refer to application note thermal resistance

ELECTRICAL CHARACTERISTICS (Ta=25ºC unless specified otherwise)

DESCRIPTION

SYMBOL

TEST CONDITION

MIN

TYP

MAX

UNIT

Breakdown Voltage

V(BR)

I(BR)=100µA

85

V

Reverse Voltage Leakage Current

IR

VR=75V

5.0

nA

VR=75V, Ta=150ºC

80

nA

Forward Voltage

VF

IF=1mA

0.9

V

IF=10mA

1.0

V

IF=50mA

1.1

V

IF=150mA

1.25

V

Diode Capacitance

Cd

VR=0V, f=1MHz

2.0

pF

Reverse Recovery Time When Switched

from

trr

IF=10mA to

IR=10mA, RL100 Ω,

measured at IR=1mA

1.5

µs

VALUE

80

85

- 65 to +150

0.5

250

4.5

150

< 260

Pin Configuration

1 =

2 = NC

3 =

ANODE

CATHODE

3

1

2

Continental Device India Limited

Data Sheet

Page 1 of 3

Continental Device India Limited

An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company

BAS116 Rev140505E

Аналогичный номер детали - BAS116

производитель	номер детали	датащи	подробное описание детали
NXP Semiconductors	BAS116	52Kb / 8P	Low-leakage diode 1999 May 26
Siemens Semiconductor G...	BAS116	98Kb / 4P	Silicon Low Leakage Diode (Low-leakage applications Medium speed switching times Single diode)
Diodes Incorporated	BAS116	44Kb / 2P	Introducing Very Low Leakage SOT-23 Diodes: DS30233 Rev. 9 - 2
Infineon Technologies A...	BAS116	444Kb / 4P	Silicon Low Leakage Diode Mar-10-2004
Diodes Incorporated	BAS116	344Kb / 3P	SURFACE MOUNT LOW LEAKAGE DIODE DS30233 Rev. 7 - 2

More results

Аналогичное описание - BAS116

производитель	номер детали	датащи	подробное описание детали
Shanghai Sunrise Electr...	IN4148	15Kb / 1P	SILICON EPITAXIAL PLANAR SWITCHING DIODE
Shanghai Sunrise Electr...	XR-85	12Kb / 1P	SILICON EPITAXIAL PLANAR SWITCHING DIODE
Continental Device Indi...	CMBD4448	124Kb / 3P	SILICON PLANAR SWITCHING DIODE
TRANSYS Electronics Lim...	BAL99	94Kb / 2P	SILICON PLANAR SWITCHING DIODE
TRANSYS Electronics Lim...	BAS16	103Kb / 2P	SILICON PLANAR SWITCHING DIODE
Kingtronics Internation...	1N4148WS	269Kb / 3P	Silicon Epitaxial Planar Switching Diode
Kingtronics Internation...	1N4148WT	289Kb / 3P	Silicon Epitaxial Planar Switching Diode
Continental Device Indi...	BAS16WS	192Kb / 3P	SILICON EXPITAXIAL PLANAR SWITCHING DIODE
	BAS16	135Kb / 3P	SILICON PLANAR SWITCHING DIODE
	BAL99	195Kb / 3P	SILICON PLANAR SWITCHING DIODE

More results

BAS116 датащи(PDF) 1 Page - Continental Device India Limited

BAS116 датащи(HTML) 1 Page - Continental Device India Limited

Аналогичный номер детали - BAS116

Аналогичное описание - BAS116

Html Pages

1 2 3

датащи скачать

ссылки URL