SILICON PLANAR EPITAXIAL HIGH-SPEED DIODE

BAV23S

SOT-23

MARKING:- L31

DESCRIPTION

BAV23S Consists of Two Planar Epitaxial High-Speed Diodes in One Microminiature Plastic Envelope

Intended for Surface Mounting. The Device is Designed for Switching & General Applications.

ABSOLUTE MAXIMUM RATINGS

DESCRIPTION

SYMBOL

VALUE

UNIT

Continuous Reverse Voltage

VR

Single Diode

200

V

Series Connection

400

V

Repetitive Peak Reverse Voltage

VRRM

Single Diode

250

V

Series Connection

500

V

Forward Current (DC)

IF(AV)

Single Diode

225

mA

Series Connection

125

mA

Repetitive Peak Forward Current

IFRM

Single Diode

625

mA

Series Connection

450

mA

Non Repetitive Peak Forward Current t=1s

IFSM

Single Diode

0.5

A

Series Connection

0.4

A

Non Repetitive Forward Current t=1us

IFSM

Single Diode

2.5

A

Series Connection

1.5

A

Power Dissipation

Ptot

300

mW

Storage Temprature Range

Tstg

-65 to 150

deg C

Junction Temperature

Tj

150

deg C

THERMAL RESISTANCE

Junction to Ambient

Rth(j-a)*

500

K/W

*Mounted on FR4 Printboard

3

Pin Configuration

1 = ANODE

2 =

3 =

CATHODE

CATHODE

ANODE/

1

2

Continental Device India Limited

Data Sheet

Page 1 of 4

Continental Device India Limited

An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company