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BC856W датащи(PDF) 2 Page - Continental Device India Limited

номер детали BC856W
подробное описание детали  PNP SILICON PLANAR EPITAXIAL TRANSISTORS
PDF  4 Pages
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производитель  CDIL [Continental Device India Limited]
домашняя страница  http://www.cdilsemi.com
Logo CDIL - Continental Device India Limited

BC856W датащи(HTML) 2 Page - Continental Device India Limited

  BC856W Datasheet HTML 1Page - Continental Device India Limited BC856W Datasheet HTML 2Page - Continental Device India Limited BC856W Datasheet HTML 3Page - Continental Device India Limited BC856W Datasheet HTML 4Page - Continental Device India Limited  
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PNP SILICON PLANAR EPITAXIAL TRANSISTORS
BC856W , 857W, 858W
SOT-323
Formed SMD Package
ELECTRICAL CHARACTERISTICS (Tamb=25ºC unless specified otherwise)
DESCRIPTION
SYMBOL
TEST CONDITION
MIN
TYP
MAX
UNITS
DC Current Gain
hFE
IC=2mA, VCE=5V
BC856W
125
475
BC857W,BC858W
125
800
BC856AW,BC857AW
125
250
BC856BW,BC857BW
220
475
BC857CW
420
800
Collector Emitter Saturation Voltage
VCE(Sat)
IC=10mA, IB=0.5mA
0.30
V
*IC=100mA, IB=5mA
0.60
V
Base Emitter Saturation Voltage
VBE(Sat)
IC=10mA, IB=0.5mA
0.70
V
*IC=100mA, IB=5mA
0.85
V
Base Emitter On Voltage
VBE (on)
IC=2mA, VCE=5V
0.60
0.75
V
IC=10mA, VCE=5V
0.82
V
Collector Capacitance
Cc
IE=ie=0, VCB=10V, f=1MHz
3.0
pF
Emitter Capacitance
Ce
IC=ic=0, VEB=0.5V, f=1MHz
12
pF
Transition Frequency
fT
IC=10mA, VCE=5V, f=100MHz
100
MHz
Noise Figure
NF
IC=0.2mA, VCE=5V
10
dB
Rs=2kΩ, f=1KHz, B=200Hz
**Pulse test tp=300µ
µs, δδ < 0.02
BC856W_BC858W Rev170210E
Continental Device India Limited
Data Sheet
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