BCW30 datasheet(1/3 Pages) CDIL

номер детали	BCW30

подробное описание детали	SILICON PLANAR EPITAXIAL TRANSISTORS

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производитель	CDIL [Continental Device India Limited]

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Continental Device India Limited

Data Sheet

Page 1 of 3

SILICON PLANAR EPITAXIAL TRANSISTORS

P–N–P transistors

Marking

BCW29 = C1

BCW30 = C2

ABSOLUTE MAXIMUM RATINGS

BCW29

BCW30

D.C. current gain at Tj = 25 °C

>

120

215

–IC = 2 mA; –VCE = 5 V

hFE

<

260

500

Collector–base voltage (open emitter)

–VCB0 max.

32

V

Collector–emitter voltage (open base)

–VCE0 max.

32

V

Collector current (peak value)

–ICM

max.

200

mA

Total power dissipation up to Tamb = 25 °C

Ptot

max,

250

mW

Junction temperature

Tj

max.

150

° C

Transition frequency at f = 35 MHz

–IC = 10 mA; –VCE = 5 V

fT

typ.

150

MHz

Noise figure at RS = 2 kW

–Ic = 200 mA; –VCE = 5 V;

f = 1 kHz; B = 200 Hz

F

<

10

dB

BCW29

BCW30

Pin configuration

1 = BASE

2 = EMITTER

3 = COLLECTOR

PACKAGE OUTLINE DETAILS

ALL DIMENSIONS IN mm

3

2

1

Continental Device India Limited

An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company

Аналогичный номер детали - BCW30

производитель	номер детали	датащи	подробное описание детали
NXP Semiconductors	BCW30	42Kb / 8P	PNP general purpose transistors 1999 Apr 13
STMicroelectronics	BCW30	37Kb / 4P	SMALL SIGNAL PNP TRANSISTORS Oct-1997
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Fairchild Semiconductor	BCW30	24Kb / 2P	PNP General Purpose Amplifier
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