NPN SILICON EPITAXIAL TRANSISTOR

BFX34

TO-39

NPN Transistor in a TO-39 Metal Envelope Primarily Intended For Use As High-Current

Switching Device, e.g. Inverters And Switching Regulators.

ABSOLUTE MAXIMUM RATINGS

DESCRIPTION

SYMBOL

VALUE

UNIT

Collector -Base Voltage

VCBO

120

V

Collector -Emitter Voltage

VCEO

60

V

Emitter Base Voltage

VEBO

6.0

V

Collector Current (d.c)

IC

2.0

A

Collector Current (peak-value)

ICM

5.0

A

Base Current (d.c)

IB

1.0

A

Power Dissipation up to Tcase=25 deg C

Ptot

5.0

W

up to Tamb=25 deg C

Ptot

0.87

W

Junction and Storage Temperature Range

Tj,Tstg

-55 to +200

deg C

THERMAL RESISTANCE

Junction to Ambient

Rth (j-a)

200

K/W

Junction to Case

Rth (j-c)

35

K/W

ELECTRICAL CHARACTERISTICS (TA=25 deg C unless otherwise specified)

SYMBOL

TEST CONDITION

MIN

TYP

MAX

UNIT

Collector Cut off Current

ICES

VCE=60V, VEB=0

-

-

10

uA

Emitter Cut off Current

IEBO

VEB=4V, IC=0

-

-

10

uA

Collector Emitter Saturation Voltage

VCE(Sat)

IC=5A, IB=0.5A

-

-

1.0

V

Base Emitter Saturation Voltage

VBE(Sat)

IC=5A, IB=0.5A

-

-

1.8

V

DC Current Gain

hFE

IC=1A, VCE=2V

-

30

-

IC=1.5A, VCE=0.6V

-

60

-

IC=2A, VCE=2V

40

-

150

Collector Capacitance

Cc

VCB=10V, IE=Ie=0

-

36

-

pF

f=1MHz

Emitter Capacitance

Ce

VEB=0.5V, IC=Ic=0

-

440

-

pF

f=1MHz

Transition Frequency

ft

IC=0.5A, VCE=5V

70

-

-

MHz

f=35MHz

Turn on Time When Switched From

ton

VBE=2V to IC=5V,

-

-

0.60

us

IB=0.5A With IBM=

0,5A

Turn on Time When Switched From

toff

IC=5A, IB=0.5A, to -

-

-

1.2

us

VBE=2V with -IBM

=0.5A

Continental Device India Limited

Data Sheet

Page 1 of 2

Continental Device India Limited

An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company