PNP SILICON PLANAR EPITAXIAL TRANSISTORS

BFX87

BFX88

TO-39

ABSOLUTE MAXIMUM RATINGS

DESCRIPTION

SYMBOL

BFX87

BFX88

UNIT

Collector -Base Voltage

VCBO

50

40

V

Collector -Emitter Voltage

VCEO

50

40

V

Collector Current (DC)

IC

600

mA

Peak value

ICM

600

mA

Emitter Current

IEM

600

mA

Power Dissipation up toTamb=25 degC

Ptot

600

mW

Operating And Storage Junction

Tj, Tstg

-65 to +200

deg C

Temperature Range

THERMAL RESISTANCE

Junction to Ambient

Rth(j-a)

300

K/W

ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless Otherwise Specified)

DESCRIPTION

SYMBOL

TEST CONDITION

MIN

TYP

MAX

UNIT

Collector-Cut off Current

ICBO

BFX87

VCB=40V, IE=0

-

-

50

nA

VCB=50V, IE=0

-

-

500

nA

Tj=100 deg C

VCB=40V, IE=0

-

-

2.0

uA

BFX88

VCB=30V, IE=0

-

-

50

nA

VCB=40V, IE=0

-

-

500

nA

Tj=100 deg C

VCB=30V, IE=0

-

-

2.0

uA

Emitter-Cut off Current

IEBO

VEB=3V, IC=0

-

-

100

nA

VEB=4V, IC=0

-

-

500

nA

DC Current Gain

hFE

IC=1mA,VCE=10V

40

-

-

IC=10mA,VCE=10V

40

-

-

IC=150mA,VCE=10V

40

-

-

IC=500mA,VCE=10V

25

-

-

Continental Device India Limited

Data Sheet

Page 1 of 3

Continental Device India Limited

An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company