BSR15 datasheet(2/4 Pages) CDIL

номер детали	BSR15

подробное описание детали	SILICON PLANAR EPITAXIAL TRANSISTORS

PDF	4 Pages

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производитель	CDIL [Continental Device India Limited]

домашняя страница	http://www.cdilsemi.com

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2 / 4 page

Continental Device India Limited

Data Sheet

Page 2 of 4

RATINGS (at TA = 25°C unless otherwise specified)

Limiting values

BSR15

BSR16

Collector–base voltage (open emitter)

–VCB0 max. 60

60 V

Collector–emitter voltage (open base)

–VCE0 max. 40

60 V

Emitter–base voltage (open collector)

–VEB0 max.

5 V

Collector current (d.c.)

–I C

max.

600

Power dissipation up to Tamb = 25 °C

Ptot

max.

250

Storage temperature

Tstg

–55 to +150

° C

Junction temperature

max.

150

° C

THERMAL RESISTANCE

From junction to ambient

Rth j–a =

500

K/W

CHARACTERISTICS

Tj = 25 °C unless otherwise specified

Collector cut–off current

BSR15

BSR16

IE = 0; –VCB = 50 V

–ICB0 <20

10 nA

IE = 0; –VCB = 50V; Tj = 150°C

–ICB0 <20

µA

–VEB = 0,5 V; –VCE = 30 V

–ICEX <50

Base current

with reverse biased emitter junction

–VEB = 3 V; –VCE = 30 V

–IBEX <50

Saturation voltages

–IC = 150 mA; –IB = 15 mA

–VCEsat<

0,4

–VBEsat <

1,3

–IC = 500 mA; –IB = 50 mA

–VCEsat<

1,6

–VBEsat <

2,6

BSR15

BSR16

D.C. current gain

–IC = 0,1 mA; –VCE = 10 V

hFE

>35

–IC = 1 mA; –VCE = 10 V

hFE

100

–IC = 10 mA; –VCE = 10 V

hFE

100

–IC = 150 mA; –VCE = 10 V

hFE

100 to 300

–IC = 500 mA; –VCE = 10 V

hFE

>30

Transition frequency at f = 100 MHz

–IC = 50 mA; –VCE = 20 V; Tamb = 25 °C fT

200

MHz

BSR15

BSR16

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