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IXTY1R4N60P датащи(PDF) 2 Page - IXYS Corporation

номер детали IXTY1R4N60P
подробное описание детали  N-Channel Enhancement Mode Avalanche Rated
PDF  4 Pages
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производитель  IXYS [IXYS Corporation]
домашняя страница  http://www.ixys.com
Logo IXYS - IXYS Corporation

IXTY1R4N60P датащи(HTML) 2 Page - IXYS Corporation

  IXTY1R4N60P Datasheet HTML 1Page - IXYS Corporation IXTY1R4N60P Datasheet HTML 2Page - IXYS Corporation IXTY1R4N60P Datasheet HTML 3Page - IXYS Corporation IXTY1R4N60P Datasheet HTML 4Page - IXYS Corporation  
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IXYS reserves the right to change limits, test conditions, and dimensions.
IXTP 1R4N60P IXTU 1R4N60P
IXTY 1R4N60P
Symbol
Test Conditions
Characteristic Values
(T
J = 25° C, unless otherwise specified)
Min.
Typ.
Max.
g
fs
V
DS= 20 V; ID = 0.5 ID25, pulse test
0.7
1.1
S
C
iss
140
pF
C
oss
V
GS = 0 V, VDS = 25 V, f = 1 MHz
17
pF
C
rss
2.4
pF
t
d(on)
10
ns
t
r
V
GS = 10 V, VDS = 0.5 VDSS, ID =0.5 ID25
16
ns
t
d(off)
R
G = 50 Ω (External)
25
ns
t
f
16
ns
Q
g(on)
5.2
nC
Q
gs
V
GS= 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25
1.34
nC
Q
gd
5.2
nC
R
thJC
2.5
° C/W
R
thCS
(TO-220)
0.25
° C/W
R
thCS
(TO-251)
1.0
° C/W
Source-Drain Diode
Characteristic Values
(T
J = 25° C, unless otherwise specified)
Symbol
Test Conditions
Min.
Typ.
Max.
I
S
V
GS = 0 V
1.4
A
I
SM
Repetitive
4
A
V
SD
I
F = IS, VGS = 0 V,
1.5
V
Pulse test, t
≤300 µs, duty cycle d≤ 2 %
t
rr
I
F = 1.5 A, -di/dt =100 A/µs
500
ns
V
R=100 V, VGS= 0 V
TO-252 AA (IXTY) Outline
Dim.
Millimeter
Inches
Min. Max.
Min.
Max.
A
2.19
2.38
0.086
0.094
A1
0.89
1.14
0.035
0.045
A2
0
0.13
0
0.005
b
0.64
0.89
0.025
0.035
b1
0.76
1.14
0.030
0.045
b2
5.21
5.46
0.205
0.215
c
0.46
0.58
0.018
0.023
c1
0.46
0.58
0.018
0.023
D
5.97
6.22
0.235
0.245
D1
4.32
5.21
0.170
0.205
E
6.35
6.73
0.250
0.265
E1
4.32
5.21
0.170
0.205
e
2.28 BSC
0.090 BSC
e1
4.57 BSC
0.180 BSC
H
9.40 10.42
0.370
0.410
L
0.51
1.02
0.020
0.040
L1
0.64
1.02
0.025
0.040
L2
0.89
1.27
0.035
0.050
L3
2.54
2.92
0.100
0.115
Pins: 1 - Gate
2,4 - Drain
3 - Source
TO-220 (IXTP) Outline
TO-251 (IXTU) Outline
IXYS MOSFETs and IGBTs are covered by 4,835,592
4,931,844
5,049,961
5,237,481
6,162,665
6,404,065 B1
6,683,344
6,727,585
one or moreof the following U.S. patents:
4,850,072
5,017,508
5,063,307
5,381,025
6,259,123 B1
6,534,343
6,710,405B2
6,759,692
4,881,106
5,034,796
5,187,117
5,486,715
6,306,728 B1
6,583,505
6,710,463
6,771,478 B2
Dim.
Millimeter
Inches
Min.
Max.
Min.
Max.
A
2.19
2.38
.086
.094
A1
0.89
1.14
0.35
.045
b
0.64
0.89
.025
.035
b1
0.76
1.14
.030
.045
b2
5.21
5.46
.205
.215
c
0.46
0.58
.018
.023
c1
0.46
0.58
.018
.023
D
5.97
6.22
.235
.245
E
6.35
6.73
.250
.265
e
2.28
BSC
.090
BSC
e1
4.57
BSC
.180
BSC
H
17.02
17.78
.670
.700
L
8.89
9.65
.350
.380
L1
1.91
2.28
.075
.090
L2
0.89
1.27
.035
.050
1. Gate
2. Drain
3. Source
4. Drain



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