PNP/NPN SILICON PLANAR EPITAXIAL TRANSISTORS

CC327, CC327A, CC328 (PNP)

CC337, CC337A, CC338 (NPN)

TO-92

BCE

Complementary Transistors For Use in Driver And Output Stages of Audio Amplifiers

ABSOLUTE MAXIMUM RATINGS(Ta=25 deg C )

DESCRIPTION

SYMBOL

CC327

CC327A

CC328

UNITS

CC337

CC337A

CC338

Collector -Emitter Voltage

VCE0

45

60

25

V

Collector -Emitter Voltage

VCES

50

60

30

V

Emitter -Base Voltage

VEBO

5.0

V

Collector Current Continuous

IC

500

mA

Peak

ICM

1.0

A

Emitter Current Peak

IEM

1.0

A

Base Current Continuous

IB

100

mA

Base Current Peak

IBM

200

mA

Power Dissipation@ Ta=25 deg C

PTA

625

mW

Derate Above 25 deg C

5

mW/deg C

Operating & Storage Junction

Tj, Tstg

-65 to +150

deg C

Temperature Range

THERMAL RESISTANCE

From Junction to Ambient in Free Air

Rth(j-a)

200

deg C/W

ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless Otherwise Specified)

DESCRIPTION

SYMBOL

TEST CONDITION

CC327

CC327A

CC328 UNITS

CC337

CC337A

CC338

Collector -Emitter Voltage

VCEO

IC=10mA,IB=0

>45

>60

>25

V

VCES

IC=100uA.IE=0

>50

>60

>30

V

Emitter-Base Voltage

VEBO

IE=10uA, IC=0

V

Collector-Cut off Current

ICBO

VCB=20V, IE=0

nA

VCB=20V, IE=0, Tj=150 deg C

uA

Emitter Cut off Current

IEBO

VEB=5V, IC=0

uA

>5.0

<100

<5.0

<10

Continental Device India Limited

Data Sheet

Page 1 of 3

E C

B

Continental Device India Limited

An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company