8/2014

U232

N-Channel Dual Silicon Junction Field-Effect Transistor

Amplifier

Reverse Gate Source & Gate Drain Voltage

-50V

Continuous Forward Gate Current

50 mA

Continuous Device Power Dissipation

300 mW

Power Derating

1.7 mW/

Storage Temperature Range

-65

At 25

U232

Process NJ16

Static Electrical Characteristics

Min

Typ

Max

Unit

Test Conditions

Gate Source Breakdown

Voltage

-50

V

Gate Reverse Current

-0.1

nA

Gate Source Cutoff Voltage

-0.5

-4.5

V

Drain Saturation Current

(pulsed)

0.5

5

mA

Dynamic Electrical Characteristics

Common-Source Forward

Transconductance

1

3

mS

f = 1 kHz

Common-Source Input

Capacitance

6

pF

f = 1 MHz

Common-Source Reverse

Transfer Capacitance

2

pF

f = 1 MHz

Equivalent Short Circuit Input

Noise Voltage

80

f = 100 Hz

Matching Characteristics

Min

Max

Units

Test Conditions

Differencial Gate-Source Voltage

(VGS1-VGS2)

10

mV

VDS = 10 V, ID = -10 mA

Differencial Gate Source Voltage

with Temperature

Δ│VGS1-

VGS2│

ΔT

25

μV/°C

VDG = 10 V, ID = 30 μA

www.interfet.com

715 N. Glenville Dr., Ste. 400

Richardson, TX 75089

(972) 238-9700 Fax (972) 238-5338

SMPU232