LP7612

Phone:

(408) 988-1845

http://

www.filss.com

Revised:

1/18/01

Fax:

(408) 970-9950

Email:

sales@filss.com

• FEATURES

♦ 21 dBm Output Power at 1-dB

Compression at 18 GHz

♦ 9.5 dB Power Gain at 18 GHz

♦ 1.0 dB Noise Figure at 18 GHz

♦ 55% Power-Added Efficiency

• DESCRIPTION AND APPLICATIONS

The LP7612 is an Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs)

Pseudomorphic High Electron Mobility Transistor (PHEMT), utilizing an Electron-Beam direct-

write 0.25

µm by 200 µm Schottky barrier gate. The recessed “mushroom” gate structure minimizes

parasitic gate-source and gate resistances.

The epitaxial structure and processing have been

P70 ceramic package.

Typical applications include high dynamic range receiver preamplifiers for commercial applications

including Cellular/PCS systems, WLL and WLAN systems, and broadband amplifiers.

• ELECTRICAL SPECIFICATIONS @ T

°C

Parameter

Symbol

Test Conditions

Min

Typ

Max

Units

Saturated Drain-Source Current

40

65

85

mA

Power at 1-dB Compression

P-1dB

19

21

dBm

Power Gain at 1-dB Compression

G-1dB

8

9.5

dB

Power-Added Efficiency

PAE

55

%

Maximum Drain-Source Current

125

mA

Transconductance

60

90

mS

Gate-Source Leakage Current

1

10

µA

Pinch-Off Voltage

-0.25

-0.8

-1.5

V

Gate-Source Breakdown

Voltage Magnitude

-6

-7

V

Gate-Drain Breakdown

Voltage Magnitude

-8

-9

V

Thermal Resistivity

Θ

JC

275

°C/W

frequency=18 GHz

DRAIN

BOND

PAD (2X)

SOURCE

BOND

PAD (2x)

DIE SIZE: 18.0X13.0 mils (460x330

µm)

DIE THICKNESS: 3.9 mils (100

µm)

BONDING PADS: 1.9X1.9 mils (50x50

µm)

GATE

BOND

PAD (2X)