LP6872

Phone:

(408) 988-1845

http://

www.filss.com

Revised:

1/18/01

Fax:

(408) 970-9950

Email:

sales@filss.com

• FEATURES

♦ 27 dBm Output Power at 1-dB

Compression at 18 GHz

♦ 9.5 dB Power Gain at 18 GHz

♦ 55% Power-Added Efficiency

• DESCRIPTION AND APPLICATIONS

The LP6872 is an Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs)

Pseudomorphic High Electron Mobility Transistor (PHEMT), utilizing an Electron-Beam direct-

write 0.25

µm by 720 µm Schottky barrier gate. The recessed “mushroom” gate structure minimizes

parasitic gate-source and gate resistances.

The epitaxial structure and processing have been

Typical applications include commercial wireless infrastructure amplifiers, such as SATCOM uplink

transmitters, PCS/Cellular low-voltage high-efficiency output amplifiers, and medium-haul digital

radio transmitters.

• ELECTRICAL SPECIFICATIONS @ T

°C

Parameter

Symbol

Test Conditions

Min

Typ

Max

Units

Saturated Drain-Source Current

180

245

260

mA

Power at 1-dB Compression

P-1dB

25

27

dBm

Power Gain at 1-dB Compression

G-1dB

8

9.5

dB

Power-Added Efficiency

PAE

55

%

Maximum Drain-Source Current

385

mA

Transconductance

175

220

mS

Gate-Source Leakage Current

5

40

µA

Pinch-Off Voltage

-0.25

-1.2

-2.0

V

Gate-Source Breakdown

Voltage Magnitude

-10

-13

V

Gate-Drain Breakdown

Voltage Magnitude

-10

-14

V

Thermal Resistivity

Θ

JC

70

°C/W

frequency=18 GHz

DRAIN

BOND

PAD (2X)

SOURCE

BOND

PAD (2x)

DIE SIZE: 14.6X19.7 mils (370x500

µm)

DIE THICKNESS: 3.0 mils (75

µm)

BONDING PADS: 1.9X2.4 mils (50x60

µm)

GATE

BOND

PAD (2X)