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TIP32 датащи(PDF) 2 Page - Nell Semiconductor Co., Ltd

номер детали TIP32
подробное описание детали  Complementary Silicon Power Transistor
PDF  5 Pages
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производитель  NELLSEMI [Nell Semiconductor Co., Ltd]
домашняя страница  http://www.nellsemi.com
Logo NELLSEMI - Nell Semiconductor Co., Ltd

TIP32 датащи(HTML) 2 Page - Nell Semiconductor Co., Ltd

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SEMICONDUCTOR
RoHS
RoHS
Nell High Power Products
Page 2 of 5
www.nellsemi.com
THERMAL CHARACTERISTICS (T = 25°C)
C
UNIT
PARAMETER
VALUE
SYMBOL
Rth(j-c)
Maximum thermal resistance, junction to case
3.1
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise specified)
C
VBE(on)
VCE(sat)
PARAMETER
Forward current transfer ratio (DC current gain)
Collector to emitter saturation voltage (Note1)
V
Collector to emitter
voltage (Note 1)
sustaining
SYMBOL
VCEO(SUS)
hFE
Base to emitter voltage (Note1)
l = 30mA, I =0
C
B
V
= 4V
= 1.0A
CE
C
, I
MAX
1.2
1.8
l = 3A, V
= 4V
C
CE
CONDITIONS
25
l = 3A, l = 0.375A
C
B
MIN
V
= 4V, I = 3A
CE
C
10
75
Note 1. Pulsed : Pulse duration
≤ 300 µS, duty cycle ≤ 2.0%.
Note 2. f = |h | • f
T
fe
TEST
Note 3. For PNP type voltage and current are negative.
Rth(j-a)
Maximum thermal resistance, junction to ambient
ºC/W
ºC/W
62.5
Off Characteristics
TIP31,TIP32
TIP31A,TIP32A
40
TIP31B,TIP32B
TIP31C,TIP32C
60
80
100
ICEO
Collector cutoff current
V
= 30V, I = 0
CE
B
V
= 60V, l = 0
CE
B
TIP31B,TIP32B
TIP31C,TIP32C
TIP31,TIP32
TIP31A,TIP32A
0.3
1.0
mA
V
IEBO
Emitter cutoff current
V
= 5V, I = 0
EB
C
ICES
Collector cutoff current
V
= 40V, V
= 0
CE
EB
TIP31,TIP32
TIP31A,TIP32A
TIP31B,TIP32B
TIP31C,TIP32C
V
= 60V, V
= 0
CE
EB
V
= 80V, V
= 0
CE
EB
V
= 100V, V
= 0
CE
EB
200
200
200
200
On Characteristics
µA
Dynamic Characteristics
Current gain - Bandwidth product (note 2)
Small signal current gain
MHZ
hfe
fT
3.0
20
l = 0.5A, V
= 10V, f
= 1MHz
C
CE
test
l = 0.5A, V
= 10V, f = 1KHz
C
CE
TIP31 (NPN) Series
TIP32 (PNP) Series
Fig.1 Power derating
Temperature (˚C)
2.0
20
40
0
60
1.0
0
3.0
4.0
100
120
80
140
160
TC
TA
TA
TC
20
10
0
30
40
TURNON PULSE
APPROX
+11 V
Vin 0
VEB(off)
t1
APPROX
+11 V
Vin
t2
TURNOFF PULSE
t3
t ≤
1
7.0 ns
100 < t2 < 500 µs
t3 < 15 ns
DUTY CYCLE ≈ 2.0%
APPROX 9.0 V
RB and RC VARIED TO OBTAIN DESIRED CURRENT LEVELS.
SCOPE
V
RC
R
B
CC
Vin
Cjd << Ceb
-4.0 V
Fig 2. Switching Time Equivalent Circuit



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