NPN SILICON EPITAXIAL TRANSISTOR

2N 697

TO-39

Metal Can Package

ABSOLUTE MAXIMUM RATINGS (Ta=25ºC unless specified otherwise)

DESCRIPTION

SYMBOL

VALUE

UNITS

Collector Emitter Voltage

40

V

Collector Base Voltage

60

V

Emitter Base Voltage

5V

Power Dissipation @ Ta=25ºC

600

mW

Derate Above 25ºC

4

mW/ºC

Power Dissipation@ Tc=25ºC

2W

Derate Above 25ºC

13.3

mW/ºC

Operating And Storage Junction

-65 to +200

ºC

Temperature Range

ELECTRICAL CHARACTERISTICS (Ta=25ºC unless specified otherwise)

DESCRIPTION

SYMBOL TEST CONDITION

MIN

MAX

UNITS

Collector Base Breakdown Voltage

60

V

Collector Emitter Breakdown Voltage

40

V

Emiter Base Breakdown Voltage

5V

Collector Cut off Current

1

µA

100

µA

DC Current Gain

10

120

Collector Emitter Saturation Voltage

1.5

V

Base Emitter Saturation Voltage

1.3

V

DYNAMIC CHARACTERISTICS

Small Signal Current Gain

2.5

f=20MHz

Output Capacitance

35

pF

*Pulse Test: Pulse Width <300

µs, Duty Cycle <2%

Continental Device India Limited

Data Sheet

Page 1 of 3

Continental Device India Limited

An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company