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PTF10149 датащи(PDF) 2 Page - Ericsson |
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PTF10149 датащи(HTML) 2 Page - Ericsson |
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2 / 6 page ![]() 2 PTF 10149 e 9 11 13 15 17 920 930 940 950 960 Frequency (MHz) 40 60 80 100 120 VDD = 26 V IDQ = 750 mA Typical POUT, Gain & Efficiency (at P-1dB) vs. Frequency Output Pow er (W) Efficiency (%) Gain (dB) Broadband Test Fixture Performance 4 8 12 16 20 920 930 940 950 960 Frequency (MHz) 0 10 20 30 40 50 60 VDD = 26 V IDQ = 750 mA POUT = 70 W Gain Return Loss Efficiency (%) - 5 -15 -25 -35 Electrical Characteristics (100% Tested) Characteristic Conditions Symbol Min Typ Max Units Drain-Source Breakdown Voltage VGS = 0 V, ID = 25 mA V(BR)DSS 65 —— Volts Drain-Source Leakage Current VDS = 26 V, VGS = 0 V IDSS —— 1.0 mA Gate Threshold Voltage VDS = 10 V, ID = 75 mA VGS(th) 3.0 — 5.0 Volts Forward Transconductance VDS = 10 V, ID = 3 A gfs — 3.0 — Siemens Maximum Ratings Parameter Symbol Value Unit Drain-Source Voltage VDSS 65 Vdc Gate-Source Voltage VGS ±20 Vdc Operating Junction Temperature TJ 200 °C Total Device Dissipation PD 197 Watts Above 25°C derate by 1.12 W/°C Storage Temperature Range TSTG –40 to +150 °C Thermal Resistance (TCASE = 70°C) RqJC 0.89 °C/W Typical Performance |
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