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Visit www.macomtech.com for additional data sheets and product information.

M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make

changes to the product(s) or information contained herein without notice.

1

GaAs MMIC Voltage Variable Absorptive Attenuator

DC - 12 GHz

Rev. V4

MAAA2000G

ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions

is considering for development. Performance is based on target specifications, simulated results,

and/or prototype measurements. Commitment to develop is not guaranteed.

PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology

Solutions has under development. Performance is based on engineering tests. Specifications are

typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available.

Commitment to produce in volume is not guaranteed.

Features

 Single or Dual Bias Control

 Easily Cascadable

 Small Size

 Attenuation Flatness DC - 12 GHz ± 0.2 dB

 Low Control Current Consumption

 Low Phase Shift

 Up to 20 dB Matched Attenuation with Dual Bias

 RoHS* Compliant

Description

The MAAA2000G is a broadband GaAs MESFET

MMIC voltage variable absorptive attenuator. Typical

applications

are

for

WLAN

IEEE

802.11a+b/g,

WiMAX IEEE 802.16, and MIMO. Other applications

include test equipment requiring ultra fast switching

speed.

The MAAA2000G is fabricated using a 1.0 micro gate

length GaAs MESFET process. The process features

full chip passivation for increased performance and

reliability.

Functional Schematic

Ordering Information

Part Number

Package

MAAA2000G

DIE

1

Electrical Specifications: 0/-5 Vdc, 50

, -55°C to +85°C

Parameter

Test Conditions

Units

Min.

Typ.

Max.

Insertion Loss

2

DC - 1.0 GHz

DC - 2.0 GHz

DC - 12.0 GHz

dB

—

—

—

—

—

—

1.2

1.4

1.5

VSWR

DC - 1.0 GHz

DC - 2.0 GHz

DC - 12.0 GHz

Ratio

—

—

—

—

—

—

1.5:1

1.5:1

1.8:1

Relative Attenuation

(Matched)

(Reflective)

(Matched)

DC - 2.0 GHz

DC - 2.0 GHz

2.0 - 12.0 GHz

dB

23

40

12

—

—

—

—

—

—

Trise, Tfall

10% to 90% RF, 90% to 10% RF

ns

—

7

—

Ton, Toff

50% Control to 90% RF, 50% Control to 10% RF

ns

—

10

—

Transients

In-band

mV

—

20

—

Input 1 dB Compression

0.5 - 4.0 GHz

dBm

—

15

—

0 to -0.2 V

µA

—

—

9

-5 V

µA

—

50

100

*Restrictions on Hazardous Substances, European Union Directive 2002/95/EC.

1. Die quantity varies.

2. Loss changes 0.00025 dB/°C (-55°C to +85°C.)