MOS FIELD EFFECT TRANSISTOR

DESCRIPTION

The 2SJ448 is P-Channel MOS Field Effect Transistor de-

signed for high voltage switching applications.

FEATURES

Drain to Source Voltage

–250

V

Gate to Source Voltage

V

Drain Current (DC)

A

Drain Current (pulse)*

A

30

W

2.0

W

Channel Temperature

150

˚C

Storage Temperature

–55 to +150

˚C

Single Avalanche Current**

–4.0

A

Single Avalanche Energy**

80

mJ

*

PW

≤ 10

µs, Duty Cycle ≤ 1 %

2SJ448

SWITCHING

P-CHANNEL POWER MOS FET

INDUSTRIAL USE

Document No. D10029EJ1V0DS00

Date Published May 1995 P

Printed in Japan

Drain

Source

Body

Diode

Gate

Gate Protection

Diode

MP-45F(ISOLATED TO-220)

10.0 ±0.3

3.2 ±0.2

4.5 ±0.2

2.7 ±0.2

1.3 ±0.2

1.5 ±0.2

2.54

2.54

0.7 ±0.1

0.65 ±0.1

2.5 ±0.1

12 3

1. Gate

2. Drain

3. Source

PACKAGE DIMENSIONS

(in millimeters)

©

1995

DATA SHEET