e

1

PTB 20151

45 Watts, 1.8–2.0 GHz

PCN/PCS Power Transistor

0

10

20

30

40

50

60

70

012

3456

789

Input Power (Watts)

f = 2.0 GHz

Typical Output Power vs. Input Power

Package 20223

Description

The 20151 is a class AB, NPN common emitter RF power transistor

intended for 26 Vdc operation from 1.8 to 2.0 GHz. Rated at 45 watts

minimum output power for PEP applications, it is specifically intended

for operation as a final or driver stage in CDMA or TDMA systems.

Ion implantation, nitride surface passivation and gold metallization

ensure excellent device reliability. 100% lot traceability is standard.

Maximum Ratings

Parameter

Symbol

Value

Unit

Collector-Emitter Voltage

50

Vdc

Collector-Base Voltage

50

Vdc

Emitter-Base Voltage (collector open)

4.0

Vdc

Collector Current (continuous)

7.7

Adc

Total Device Dissipation at Tflange = 25° C

200

Watts

Above 25°C derate by

1.2

W/°C

Storage Temperature Range

–40 to +150

°C

Thermal Resistance (Tflange = 70° C)

0.85

°C/W

20151

LOT

CODE

9/28/98