ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless Otherwise Specified)

2N5088/89

DESCRIPTION

SYMBOL

Min

Max

UNITS

DC Current Gain

hFE

IC=100uA,VCE=5V

2N5088

300

900

2N5089

400

1200

IC=1mA,VCE=5V

2N5088

350

-

2N5089

450

-

IC=10mA,VCE=5V*

2N5088

300

-

2N5089

400

-

Collector Emitter Saturation Voltage

VCE(Sat)

IC=10mA, IB=1.0mA

-

0.5

V

Base Emitter on Voltage

VBE(on) *

IC=10mA,VCE=5V

-

0.8

V

DYNAMIC CHARACTERISTICS

Current Gain Bandwidth Product

ft

IC=500uA,VCE=5V

>50

-

MHz

f=20MHz

Collector-Base Capacitance

Ccb

VCB=5V, f=100kHz

-

<4.0

pF

Emitter-Base Capacitance

Ceb

VEB=0.5V, f=100kHz

-

<10

pF

Small Signal Current Gain

hfe

IC=1mA, VCE=5V

2N5088

350

1400

f=1kHz

2N5089

450

1800

Noise Figure

NF

IC=100uA, VCE=5V,

2N5088

-3.0

dB

Rs=10kohms, f=10Hz

2N5089

-2.0

dB

to 15.7 kHz

*Pulsed: pulse Duration =300us, Duty Cycle=2%

(1)Rth (j-a) is measured with the device soldered into a typical printed circuit board.

Continental Device India Limited

Data Sheet

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