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2N5294 датащи(PDF) 2 Page - Continental Device India Limited

номер детали 2N5294
подробное описание детали  NPN PLASTIC POWER TRANSISTORS
PDF  4 Pages
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производитель  CDIL [Continental Device India Limited]
домашняя страница  http://www.cdilsemi.com
Logo CDIL - Continental Device India Limited

2N5294 датащи(HTML) 2 Page - Continental Device India Limited

  2N5294 Datasheet HTML 1Page - Continental Device India Limited 2N5294 Datasheet HTML 2Page - Continental Device India Limited 2N5294 Datasheet HTML 3Page - Continental Device India Limited 2N5294 Datasheet HTML 4Page - Continental Device India Limited  
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Continental Device India Limited
Data Sheet
Page 2 of 4
RATINGS (at TA=25°C unless otherwise specified)
Limiting values
5294 5296 5298
Collector-base voltage (open emitter)
VCBO
max. 80
60
80 V
Collector-emitter voltage (open base)
VCEO
max. 70
40
60 V
Collector-emitter voltage (VBE = 1.5V)
VCEV
max. 80
60
80 V
Collector-emitter voltage (RBE = 100Ω)VCER
max. 75
50
70 V
Emitter-base voltage (open base)
VEBO
max. 7.0
5.0
5.0 V
Collector current
IC
max.
4.0
A
Base current
IB
max.
2.0
A
Total power dissipation up to TC = 25°C
Ptot
max.
36
W
Derate above 25°C
max.
0.288
W/° C
Total power dissipation up to TA = 25°C
Ptot
max.
1.8
W
Derate above 25°C
max.
0.0144
W/°C
Junction temperature
Tj
max.
150
°C
Storage temperature
Tstg
–65 to +150
°C
THERMAL RESISTANCE
From junction to ambient
Rth j–a
70
° C/W
From junction to case
Rth j–c
3.5
° C/W
CHARACTERISTICS
Tamb = 25°C unless otherwise specified
5294 5296 5298
Collector cutoff current
VCE = 65 V; VBE = 1.5 V
ICEV
max. 0.5
0.5 mA
VCE = 35 V; VBE = 1.5 V
ICEV
max.
2.0
mA
VCE = 65 V; VBE = 1.5 V; TC = 150°C
ICEV
max. 3.0
3.0 mA
VCE = 35 V; VBE = 1.5 V; TC = 150°C
ICEV
max.
5.0
mA
VCE = 50 V; RBE = 100 Ω
ICER
max. 0.5
0.5 mA
VCE = 50 V; RBE = 100 Ω; TC = 150°C
ICER
max. 2.0
2.0 mA
Emitter cut-off current
IC = 0; VEB = 7 V
IEBO
max. 1.0
mA
IC = 0; VEB = 5 V
IEBO
max.
1.0
1.0 mA
Breakdown voltages
IC = 100 mA; IB = 0
VCEO(sus)* min.
70
40
60
V
IC = 1 mA; IE = 0
VCBO
min.
80
60
80
V
IE = 1 mA; IC = 0
VEBO
min.
7
5
5
V
Saturation voltages
IC = 0.5 A; IB = 0.05 A
VCEsat*
max. 1.0
V
IC = 1 A; IB = 0.1 A
VCEsat*
max.
1.0
V
IC = 1.5 A; IB = 0.15 A
VCEsat*
max.
1.0 V
Base-emitter on voltage
IC = 0.5 A; VCE = 4 V
VBE(on)*
max. 1.1
V
IC = 1 A; VCE = 4 V
VBE(on)*
max.
1.3
V
IC = 1.5 A; VCE = 4 V
VBE(on)*
max.
1.5 V
2N5294, 2N5296, 2N5298



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