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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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2N5320 датащи(PDF) 2 Page - Continental Device India Limited |
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2N5320 датащи(HTML) 2 Page - Continental Device India Limited |
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2 / 4 page  SILICON POWER SWITCHING TRANSISTORS 2N5320, 2N5321 NPN 2N5322, 2N5323 PNP TO-39 Metal Can Package ELECTRICAL CHARACTERISTICS (Ta=25ºC unless specified otherwise) DESCRIPTION SYMBOL MIN TYP MAX UNITS DC Current Gain *hFE 10 30 130 40 250 Collector Emitter Saturation Voltage *VCE (sat) 0.5 V 0.8 V 0.7 V 1.2 V Base Emitter On Voltage *VBE (on) 1.1 V 1.4 V DYNAMIC CHARACTERISTICS Small Signal Current Gain hfe 5 SWITCHING CHARACTERISTICS Turn On time ton 80 ns 100 ns Turn Off time toff 800 ns 1000 ns *Pulsed: Pulse width <300 µµs, duty cycle <2% 2N5320/5321 2N5322/5323 2N5320/5322 2N5321/5323 2N5320/5321 2N5322/5323 VCC=30V, IC=500mA, IB1=50mA VCC=30V, IC=500mA, IB1=IB2=50mA IC=50mA,VCE=4V, f=10MHz 2N5320/5322 IC=500mA, IB=50mA IC=500mA, VCE=4V 2N5321 2N5322 2N5323 TEST CONDITION IC=0.5A, VCE=4V 2N5321/5323 2N5320 2N5320/5322 IC=1A, VCE=2V Continental Device India Limited Data Sheet Page 2 of 4 |
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