PNP EPITAXIAL PLANAR SILICON TRANSISTOR

CSA916

TO-237

BCE

Audio Frequency Amplifier Applications

Complementary CSC1941

ABSOLUTE MAXIMUM RATINGS(Ta=25deg C unless otherwise specified)

DESCRIPTION

SYMBOL

VALUE

UNIT

Collector -Base Voltage

VCBO

160

V

Collector -Emitter Voltage

VCEO

160

V

Emitter Base Voltage

VEBO

5.0

V

Collector Current DC

IC

50

mA

Collector Current Peak *

IC

100

mA

Collector Power Dissipation

PT

1.0

W

Operating And Storage Junction

Tj, Tstg

-55 to +150

deg C

Temperature Range

*PW=10ms, duty cycle=50%

ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless Otherwise Specified)

DESCRIPTION

SYMBOL

TEST CONDITION

MIN

TYP

MAX

UNIT

Collector Cut off Current

ICBO

VCB=160V, IE=0

-

-

100

nA

Emitter Cut off Current

IEBO

VEB=5V, IC=0

-

-

100

nA

DC Current Gain

hFE(1) **

IC=1mA,VCE=10V

50

-

-

hFE(2) **

IC=10mA,VCE=10V

90

-

400

Base Emitter On Voltage

VBE(on) **

IC=10mA,VCE=10V

650

-

750

mV

Collector Emitter Saturation Voltage

VCE(Sat) ** IC=20mA,IB=2mA

-

-

0.60

V

Base Emitter Saturation Voltage

VBE(Sat) ** IC=20mA,IB=2mA

-

-

1.0

V

Dynamic Characteristics

Transition Frequency

ft

VCE=10V,IC=10mA,

50

-

-

MHz

Collector Output Capacitance

Cob

VCB=10V, IE=0

-

-

3.5

pF

f=1MHz

hFE (2) CLASSIFICATION

MA : 90-180LA : 135-270

KA : 200-400

** PW=350us, Duty Cycle=2% Pulsed

Continental Device India Limited

Data Sheet

Page 1 of 2

Continental Device India Limited

An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company