 |
поискавой системы для электроныых деталей |
|
|
поискавой системы для электроныых деталей |
|
IRF6215STRR датащи(PDF) 2 Page - International Rectifier |
|
|
|||||||||||||||||||||||||||||
IRF6215STRR датащи(HTML) 2 Page - International Rectifier |
|
|
2 / 11 page  IRF6215S/L Starting T J = 25°C, L = 14mH RG = 25Ω, IAS = -6.6A. (See Figure 12) Repetitive rating; pulse width limited by max. junction temperature. ( See fig. 11 ) Notes: ** When mounted on 1" square PCB (FR-4 or G-10 Material ). For recommended footprint and soldering techniques refer to application note #AN-994. ISD ≤ -6.6A, di/dt ≤ -620A/µs, VDD ≤ V(BR)DSS, TJ ≤ 175°C Pulse width ≤ 300µs; duty cycle ≤ 2%.
Uses IRF6215 data and test conditions Parameter Min. Typ. Max. Units Conditions IS Continuous Source Current MOSFET symbol (Body Diode) ––– ––– showing the ISM Pulsed Source Current integral reverse (Body Diode) ––– ––– p-n junction diode. VSD Diode Forward Voltage ––– ––– -1.6 V TJ = 25°C, IS = -6.6A, VGS = 0V trr Reverse Recovery Time ––– 160 240 ns TJ = 25°C, IF = -6.6A Qrr Reverse Recovery Charge ––– 1.2 1.7 µC di/dt = -100A/µs
ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Source-Drain Ratings and Characteristics A S D G -11 -44 Parameter Min. Typ. Max. Units Conditions V(BR)DSS Drain-to-Source Breakdown Voltage -150 ––– ––– V VGS = 0V, ID = -250µA ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– -0.20 ––– V/°C Reference to 25°C, ID = -1mA ––– ––– 0.29 VGS = -10V, ID = -6.6A ––– ––– 0.58 Ω VGS = -10V, ID = -6.6A TJ = 150°C VGS(th) Gate Threshold Voltage -2.0 ––– -4.0 V VDS = VGS, ID = -250µA gfs Forward Transconductance 3.6 ––– ––– S VDS = -25V, ID = -6.6A ––– ––– -25 µA VDS = 150V, VGS = 0V ––– ––– -250 VDS = 120V, VGS = 0V, TJ = 150°C Gate-to-Source Forward Leakage ––– ––– 100 VGS = -20V Gate-to-Source Reverse Leakage ––– ––– -100 nA VGS = 20V Qg Total Gate Charge ––– ––– 66 ID = -6.6A Qgs Gate-to-Source Charge ––– ––– 8.1 nC VDS = -120V Qgd Gate-to-Drain ("Miller") Charge ––– ––– 35 VGS = -10V, See Fig. 6 and 13
td(on) Turn-On Delay Time ––– 14 ––– VDD = -75V tr Rise Time ––– 36 ––– ID = -6.6A td(off) Turn-Off Delay Time ––– 53 ––– RG = 6.8Ω tf Fall Time ––– 37 ––– RD = 12Ω, See Fig. 10
Between lead, ––– ––– and center of die contact Ciss Input Capacitance ––– 860 ––– VGS = 0V Coss Output Capacitance ––– 220 ––– pF VDS = -25V Crss Reverse Transfer Capacitance ––– 130 ––– ƒ = 1.0MHz, See Fig. 5 Electrical Characteristics @ TJ = 25°C (unless otherwise specified) RDS(on) Static Drain-to-Source On-Resistance IGSS IDSS Drain-to-Source Leakage Current LS Internal Source Inductance 7.5 nH |
|
|
ссылки URL |
| Вашему бизинису помогли Аллдатащит? [ DONATE ] |
Что такое Аллдатащит | реклама | контакт | Конфиденциальность | Ссылка на техническое описание | обмен ссыками | поиск по производителю All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |
Russian ▼
English
Chinese
German
Japanese
Russian
Korean
Spanish
French
Italian
Portuguese
Polish
Vietnamese
Indian
Mexican
British
New Zealand
