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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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IRF3707S датащи(PDF) 2 Page - International Rectifier |
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IRF3707S датащи(HTML) 2 Page - International Rectifier |
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2 / 11 page  IRF3707/3707S/3707L 2 www.irf.com Dynamic @ TJ = 25°C (unless otherwise specified) ns Symbol Parameter Typ. Max. Units EAS Single Pulse Avalanche Energy ––– 213 mJ IAR Avalanche Current ––– 62 A Avalanche Characteristics S D G Diode Characteristics 62 248 A Symbol Parameter Min. Typ. Max. Units Conditions gfs Forward Transconductance 37 ––– ––– SVDS = 15V, ID = 49.6A Qg Total Gate Charge ––– 19 ––– ID = 24.8A Qgs Gate-to-Source Charge ––– 8.2 ––– nC VDS = 15V Qgd Gate-to-Drain ("Miller") Charge ––– 6.3 ––– VGS = 4.5V Qoss Output Gate Charge ––– 18 27 VGS = 0V, VDS = 15V td(on) Turn-On Delay Time ––– 8.5 ––– VDD = 15V tr Rise Time ––– 78 ––– ID = 24.8A td(off) Turn-Off Delay Time ––– 11.8 ––– RG = 1.8Ω tf Fall Time ––– 3.3 ––– VGS = 4.5V Ciss Input Capacitance ––– 1990 ––– VGS = 0V Coss Output Capacitance ––– 707 ––– VDS = 15V Crss Reverse Transfer Capacitance ––– 50 ––– pF ƒ = 1.0MHz VSD Diode Forward Voltage Symbol Parameter Min. Typ. Max. Units Conditions IS Continuous Source Current MOSFET symbol (Body Diode) ––– ––– showing the ISM Pulsed Source Current integral reverse (Body Diode) ––– ––– p-n junction diode. ––– 0.88 1.3 V TJ = 25°C, IS = 31A, VGS = 0V ––– 0.8 ––– TJ = 125°C, IS = 31A, VGS = 0V trr Reverse Recovery Time ––– 39 59 ns TJ = 25°C, IF = 31A, VR=20V Qrr Reverse Recovery Charge ––– 49 74 nC di/dt = 100A/µs trr Reverse Recovery Time ––– 42 63 ns TJ = 125°C, IF = 31A, VR=20V Qrr Reverse Recovery Charge ––– 62 93 nC di/dt = 100A/µs Parameter Min. Typ. Max. Units Conditions V(BR)DSS Drain-to-Source Breakdown Voltage 30 ––– ––– VVGS = 0V, ID = 250µA ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 0.027 ––– V/°C Reference to 25°C, ID = 1mA ––– 9.0 12.5 VGS = 10V, ID = 15A ––– 12.6 17 VGS = 4.5V, ID = 12A VGS(th) Gate Threshold Voltage 1.0 ––– 3.0 V VDS = VGS, ID = 250µA ––– ––– 20 µA VDS = 24V, VGS = 0V ––– ––– 100 VDS = 24V, VGS = 0V, TJ = 125°C Gate-to-Source Forward Leakage ––– ––– 200 VGS = 16V Gate-to-Source Reverse Leakage ––– ––– -200 nA VGS = -16V Static @ TJ = 25°C (unless otherwise specified) IGSS IDSS Drain-to-Source Leakage Current RDS(on) Static Drain-to-Source On-Resistance m Ω |
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