NPN SILICON PLANAR EPITAXIAL TRANSISTOR

CSD471A

TO-92

BCE

Low Frequency Power Amplifier.

Complementary CSB564A

ABSOLUTE MAXIMUM RATINGS(Ta=25deg C )

DESCRIPTION

SYMBOL

VALUE

UNIT

Collector -Base Voltage

BVCBO

40

V

Collector Emitter Voltage

BVCEO

30

V

Emitter Base Voltage

BVEBO

5.0

V

Collector Current

IC

1.0

A

Collector Dissipation

PC

800

mW

Junction Temperature

Tj

150

deg C

Storage Temperature

Tstg

-55 to +150

deg C

ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless Otherwise Specified)

DESCRIPTION

SYMBOL

TEST CONDITION

MIN

TYP

MAX

UNIT

Collector -Base Voltage

BVCBO

IC=100uA, IE=0

40

-

-

V

Collector Emitter Voltage

BVCEO

IC=10mA, IB=0

30

-

-

V

Emitter Base Voltage

BVEBO

IE=100uA, IC=0

5.0

-

-

V

Collector Cut off Current

ICBO

VCB=30V, IE=0

-

-

0.1

uA

DC Current Gain

hFE

VCE=1V, IC=100mA

70

-

400

Collector Emitter Saturation Voltage

VCE(Sat)

IC=1A, IB=0.1A

-

-

0.5

V

Base Emitter Saturation Voltage

VBE(Sat)

IC=1A, IB=0.1A

-

-

1.2

V

Dynamic Characteristics

Transition Frequency

ft

VCE=6V, IC=10mA,

-

130

-

MHz

Output Capacitance

Cob

VCB=6V, IE=0

-

16

-

pF

f=1MHz

hFE* Classification :

O : 70-140;

Y : 120-240;

G : 200-400;

Continental Device India Limited

Data Sheet

Page 1 of 3

E C

B

Continental Device India Limited

An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company