BAT74_3

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© NXP B.V. 2010. All rights reserved.

Product data sheet

Rev. 03 — 19 April 2010

2 of 10

NXP Semiconductors

BAT74

Schottky barrier double diode

3.

Ordering information

4.

Marking

[1]

* = -: made in Hong Kong

* = p: made in Hong Kong

* = t: made in Malaysia

* = W: made in China

5.

Limiting values

[1]

Series connection.

[2]

If both diodes are in forward operation at the same moment, total device current is max. 110 mA. If one

diode is in reverse operation and the other is in forward operation at the same moment, total device current

is max. 200 mA.

Table 3.

Ordering information

Type number

Package

Name

Description

Version

BAT74

-

plastic surface-mounted package; 4 leads

SOT143B

Table 4.

Marking codes

Type number

Marking code[1]

BAT74

*L4

Table 5.

Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol

Parameter

Conditions

Min

Max

Unit

Per diode

reverse voltage

-

30

V

forward current

-

200

mA

repetitive peak forward

current

-

300

mA

non-repetitive peak forward

current

-

600

mA

total power dissipation

230

mW

junction temperature

-

125

°C

ambient temperature

−65

+125

°C

storage temperature

−65

+150

°C

Double diode operation

reverse voltage

-

30

V

[1] -60

V

forward current

[2] -110

mA

repetitive peak forward

current

-

200

mA