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2SJ243 датащи(PDF) 2 Page - NEC |
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2SJ243 датащи(HTML) 2 Page - NEC |
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2 / 6 page ![]() 2SJ243 2 ELECTRICAL CHARACTERISTICS (TA = 25 ˚C) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Drain Cut-Off Current IDSS VDS = –30 V, VGS = 0 –1.0 µA Gate Leakage Current IGSS VGS = ±5 V, VDS = 0 ±0.1 ±3.0 µA Gate Cut-Off Voltage VGS(off) VDS = –3 V, ID = –10 µA –1.6 –1.9 –2.3 V Forward Transfer Admittance |yfs|VDS = –3 V, ID = 10 mA 20 30 mS Drain to Source On-State Resistance RDS(on)1 VGS = –2.5 V, ID = –1 mA 55 100 Ω Drain to Source On-State Resistance RDS(on)2 VGS = –4.0 V, ID = –10 mA 20 25 Ω Input Capacitance Ciss VDS = –5.0 V, VGS = 0, f = 1 MHz 16 pF Output Capacitance Coss 13 pF Reverse Transfer Capacitance Crss 2pF Turn-On Delay Time td(on) VDD = –5V, ID = –10 mA 10 ns Rise Time tr VGS(on) = –5 V, RG = 10 Ω 40 ns Turn-Off Delay Time td(off) RL = 500 Ω 130 ns Fall Time tf 80 ns SWITCHING TIME MEASUREMENT CIRCUIT AND CONDITIONS (Resistive Load) PG. RG 0 VGS DUT RL VDD τ = 1 s µ Duty cycle ≤ 1 % Gate Voltage Waveform Drain Current Waveform VGS 10 % 90 % VGS(on) 10 % 0 ID ID 90 % 90 % td(on) tr td(off) tf 10 % τ |
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