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STGPL6NC60DI датащи(PDF) 7 Page - STMicroelectronics

номер детали STGPL6NC60DI
подробное описание детали  6 A, 600 V hyper fast IGBT
PDF  18 Pages
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производитель  STMICROELECTRONICS [STMicroelectronics]
домашняя страница  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STGPL6NC60DI датащи(HTML) 7 Page - STMicroelectronics

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STGBL6NC60DI, STGDL6NC60DI, STGPL6NC60DI, STGFL6NC60DI
Electrical characteristics
Doc ID 15536 Rev 2
7/18
Figure 8.
Normalized gate threshold voltage
vs temperature
Figure 9.
Collector-emitter on voltage vs
collector current
Figure 10.
Normalized breakdown voltage vs
temperature
Figure 11.
Switching losses vs temperature
Figure 12.
Switching losses vs gate resistance Figure 13.
Switching losses vs collector
current
E
40
30
20
10
0
TJ(°C)
(µJ)
25
75
50
100
50
Eon
Eoff
VCC = 390 V, VGE = 15 V
IC = 3 A, RG = 10
Ω
AM03825v1
E
100
80
60
40
0
RG(
Ω)
(µJ)
40
120
80
160
Eon
Eoff
VCC = 390 V, VGE = 15 V
IC = 3 A, Tj = 125 °C
AM03826v1
E
30
20
10
0
0.5
Ic(A)
(µJ)
1
2
1.5
2.5
Eon
Eoff
VCC = 390 V, VGE = 15 V
Rg = 10
Ω, Tj = 125 °C
3
50
40
AM03827v1



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