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EL5210CS датащи(PDF) 3 Page - Elantec Semiconductor

номер детали EL5210CS
подробное описание детали  30MHz Rail-to-Rail Input-Output Op Amps
PDF  14 Pages
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производитель  ELANTEC [Elantec Semiconductor]
домашняя страница  http://www.elantec.com
Logo ELANTEC - Elantec Semiconductor

EL5210CS датащи(HTML) 3 Page - Elantec Semiconductor

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EL5210C/EL5410C
30MHz Rail-to-Rail Input-Output Op Amps
Electrical Characteristics
VS+ = 5V, VS- = 0V, RL = 1k
Ω and CL = 12pF to 2.5V, TA = 25°C unless otherwise specified.
Parameter
Description
Condition
Min
Typ
Max
Unit
Input Characteristics
VOS
Input Offset Voltage
VCM = 2.5V
3
15
mV
TCVOS
Average Offset Voltage Drift [1]
7µV/°C
IB
Input Bias Current
VCM = 2.5V
2
60
nA
RIN
Input Impedance
1G
Ω
CIN
Input Capacitance
2pF
CMIR
Common-Mode Input Range
-0.5
+5.5
V
CMRR
Common-Mode Rejection Ratio
for VIN from -0.5V to 5.5V
45
66
dB
AVOL
Open-Loop Gain
0.5V
≤ VOUT ≤ 4.5V
65
80
dB
Output Characteristics
VOL
Output Swing Low
IL = -5mA
100
200
mV
VOH
Output Swing High
IL = 5mA
4.8
4.9
V
ISC
Short Circuit Current
±120
mA
IOUT
Output Current
±30
mA
Power Supply Performance
PSRR
Power Supply Rejection Ratio
VS is moved from 4.5V to 15.5V
60
80
dB
IS
Supply Current (Per Amplifier)
No Load
2.5
3.75
mA
Dynamic Performance
SR
Slew Rate [2]
1V
≤ VOUT ≤ 4V, 20% o 80%
33
V/µs
tS
Settling to +0.1% (AV = +1)
(AV = +1), VO = 2V Step
140
ns
BW
-3dB Bandwidth
30
MHz
GBWP
Gain-Bandwidth Product
20
MHz
PM
Phase Margin
50
°
CS
Channel Separation
f = 5MHz
110
dB
dG
Differential Gain [3]
RF = RG = 1k
Ω and VOUT = 1.4V
0.30
%
dP
Differential Phase[3]
RF = RG = 1k
Ω and VOUT = 1.4V
0.66
°
1.
Measured over operating temperature range
2.
Slew rate is measured on rising and falling edges
3.
NTSC signal generator used



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