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2SC4957 датащи(PDF) 3 Page - California Eastern Labs

номер детали 2SC4957
подробное описание детали  NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION 4-PIN SUPER MINIMOLD
PDF  5 Pages
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производитель  CEL [California Eastern Labs]
домашняя страница  http://www.cel.com
Logo CEL - California Eastern Labs

2SC4957 датащи(HTML) 3 Page - California Eastern Labs

  2SC4957 Datasheet HTML 1Page - California Eastern Labs 2SC4957 Datasheet HTML 2Page - California Eastern Labs 2SC4957 Datasheet HTML 3Page - California Eastern Labs 2SC4957 Datasheet HTML 4Page - California Eastern Labs 2SC4957 Datasheet HTML 5Page - California Eastern Labs  
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Data Sheet PU10520EJ01V0DS
3
2SC4957
TYPICAL CHARACTERISTICS (TA = +25°C, unless otherwise specified)
Collector to Emitter Voltage VCE (V)
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
Collector Current IC (mA)
COLLECTOR CURRENT
DC CURRENT GAIN vs.
Collector Current IC (mA)
vs. COLLECTOR CURRENT
GAIN BANDWIDTH PRODUCT
Ambient Temperature TA (˚C)
TOTAL POWER DISSIPATION
vs. AMBIENT TEMPERATURE
Collector to Base Voltage VCB (V)
vs. COLLECTOR TO BASE VOLTAGE
REVERSE TRANSFER CAPACITANCE
Base to Emitter Voltage VBE (V)
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
200
100
0
50
100
150
180 mW
Free Air
0.1
0.5
0.2
0.3
0.4
0.5
1
2
5
10
20
f = 1 MHZ
50
40
30
20
10
0
0.5
1.0
VCE = 3 V
60
0
1
500 A
400 A
300 A
200 A
IB = 100 A
50
40
30
20
10
2345
6
μ
μ
μ
μ
μ
0.1
200
100
0
0.2 0.5 1 2
5 10 20
50 100
VCE = 3 V
VCE = 5 V
14
0.5
12
10
8
6
4
2
1
2
5
10
20
50
VCE = 1 V
f = 2 GHZ
VCE = 3 V
VCE = 5 V
Remark The graphs indicate nominal characteristics.
NE68539 /



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