Data Sheet

www.rohm.com

© 2012 ROHM Co., Ltd. All rights reserved.

SiC Schottky Barrier Diode

SCS110AG

Applications

Dimensions (Unit : mm)

Structure

Switching power supply

Features

1)Shorter recovery time

2)Reduced temperature dependence

3)High-speed switching possible

Construction

Silicon carbide epitaxial planer type

Absolute maximum ratings (Tj=25°C)

Symbol

Unit

V

V

A

A

A

A

Total power disspation

W

Tj

°C

Tstg

°C

Junction to case

Rth(j-c)

°C / W

Electrical characteristics (Tj=25°C)

Symbol

Min.

Typ.

Max.

Unit

600

-

-

V

-1.5

1.7

V

-1.82

-

V

-

2

200

μAV

-40

-

μAV

-

430

-

pF

-47

-

pF

Qc

-

16

-

nC

tc

-

15

-

ns

Total capacitance

C

Total capacitive charge

Switching time

55 to 175

1.8

(*1)Tc=134°C (*2)PW=8.3ms sinusoidal,Tj=25°C

(*3)PW=10

s square,Tj=25°C (*4)Tc=100°C,Tj=150°C,Duty cycle=10% (*5)Tc=25°C

Reverse current

Conditions

DC blocking voltage

Parameter

Limits

Reverse voltage (repetitive peak)

600

Reverse voltage (DC)

600

Continuous forward current

10*

1

40*

2

160*

3

Surge no repetitive forward current

Repetitive peak forward current

42*

4

83*

5

Junction temperature

175

Range of storage temperature

Parameter

Forward voltage

ROHM : ＴO-220AC

1/3

2012.09 - Rev.C