6 - 14 GHz

Rev. V2

MASW-011021

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Visit www.macomtech.com for additional data sheets and product information.

M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make

changes to the product(s) or information contained herein without notice.

ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions

is considering for development. Performance is based on target specifications, simulated results,

and/or prototype measurements. Commitment to develop is not guaranteed.

PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology

Solutions has under development. Performance is based on engineering tests. Specifications are

typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available.

Commitment to produce in volume is not guaranteed.

2

Parameter

Absolute Maximum

Operating Temperature

-65°C to +125°C

Storage Temperature

-65°C to +150°C

Junction Temperature

+175°C

Applied Reverse Voltage

200 V

Bias Current +25°C

100 mA

3. Typical Switching Speed measured for 10% to 90 % of detected RF signal driven by TTL compatible drivers.

4. Maximum reverse leakage current in either the shunt or series PIN diodes shall be 0.1 µA maximum.

5. 20 W up to 300 µs 40% Duty Cycle

6. Exceeding any one or combination of these limits may cause

permanent damage to this device.

7. M/A-COM Technology Solutions does not recommend

sustained operation near these survivability limits.

Parameter

Units

Min.

Typ.

Max.

Insertion Loss

8 GHz

10 GHz

12 GHz

dB

—

—

—

0.70

0.70

0.65

0.85

0.85

0.85

Input to Output Isolation

8 GHz

10 GHz

12 GHz

dB

30

30

30

34

36

34

—

—

—

Return Loss

dB

—

15

—

IIP3

dBm

—

60

—

Switching Speed

3

ns

—

130

—

Voltage Rating

4

V

—

200

—

CW Power Handling

W

—

10

—

Handling Procedures

Please observe the following precautions to avoid

damage:

Static Sensitivity

Silicon Integrated Circuits are sensitive to

electrostatic discharge (ESD) and can be damaged

by static electricity. Proper ESD control techniques

should be used when handling these Class 1A

HBM devices.