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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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SCG4153 датащи(PDF) 1 Page - SeCoS Halbleitertechnologie GmbH |
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SCG4153 датащи(HTML) 1 Page - SeCoS Halbleitertechnologie GmbH |
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1 / 4 page  http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. Elektronische Bauelemente SCG4153 0.8A , 20V , RDS(ON) 310 mΩ Ω Ω Ω N-Channel Enhancement Mode MOSFET 12-Mar-2013 Rev. A Page 1 of 4 N3 = Date Code RoHS Compliant Product A suffix of “-C” specifies halogen and lead-free DESCRIPTION These miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS(on) and to ensure minimal power loss and heat dissipation. MECHANICAL DATA Trench Technology Supper high density cell design Excellent ON resistance Extremely Low Threshold Voltage APPLICATION DC-DC converter circuit Load Switch MARKING PACKAGE INFORMATION Package MPQ Leader Size SOT-523 3K 7 inch MAXIMUM RATINGS (TA = 25°C unless otherwise specified) Rating Parameter Symbol 10S Steady State Unit Drain – Source Voltage VDS 20 V Gate – Source Voltage VGS ±6 V TA= 25°C 0.88 0.8 Continuous Drain Current 1 TA= 70°C ID 0.71 0.64 A TA= 25°C 0.37 0.3 Power Dissipation 1 TA= 70°C PD 0.23 0.19 W TA= 25°C 0.76 0.69 Continuous Drain Current 2 TA= 70°C ID 0.6 0.55 A TA= 25°C 0.27 0.22 Power Dissipation 2 TA= 70°C PD 0.17 0.14 W Pulsed Drain Current 3 IDM 1.4 A Lead Temperature TL 260 °C Operating Junction & Storage Temperature Range TJ, TSTG 150, -55~150 °C SOT-523 Top View A L M C B D G H J F K E 1 2 3 1 2 3 Millimeter Millimeter REF. Min. Max. REF. Min. Max. A 1.5 1.7 G - 0.1 B 1.45 1.75 H 0.55 REF. C 0.7 0.9 J 0.1 0.2 D 0.7 0.9 K - E 0.9 1.1 L 0.5 TYP. F 0.15 0.35 M 0.25 0.325 Top View |
Аналогичный номер детали - SCG4153 |
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Аналогичное описание - SCG4153 |
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