http://www.SeCoSGmbH.com/

Any changes of specification will not be informed individually.

Elektronische Bauelemente

SCG2019

Ω

Ω

Ω

P-Channel Enhancement Mode MOSFET

12-Mar-2013 Rev. A

Page 2 of 4

THERMAL RESISTANCE RATINGS

Note:

1. Surface mounted on FR4 Board using 1 square inch pad size, 1oz copper.

2. Surface mounted on FR4 board using minimum pad size, 1oz copper

3. Repetitive rating, pulse width limited by junction temperature, tp=10µs, Duty Cycle=1%

Parameter

Symbol

Min.

Typ.

Max.

Unit

Teat Conditions

Static

Drain-Source Breakdown Voltage

-20

-

-

V

Zero Gate Voltage Drain Current

-

-

-1

µA

Gate-Source Leakage

-

-

±5

µA

Gate-Threshold Voltage

-0.4

-0.65

-0.9

V

-

480

810

-

620

1050

Drain-Source On Resistance

-

780

1300

m

Forward Transconductance

-

1.25

-

S

Body-Drain Diode Ratings

Diode Forward On–Voltage

-0.5

-0.65

-1.5

V

Dynamic Characteristics

Input Capacitance

-

74.5

-

Output Capacitance

-

10.8

-

Reverse Transfer Capacitance

-

10.2

-

pF

f=100KHz

Total Gate Charge

-

1.8

-

Threshold Gate Charge

-

0.12

-

Gate-to-Source Charge

-

0.18

-

Gate-to-Drain Charge

-

0.74

-

nC

Turn-on Delay Time

-

45

-

Rise Time

-

140

-

Turn-off Delay Time

-

1500

-

Fall Time

-

2100

-

nS

Rating

Parameter

Symbol

Typ.

Max.

Unit

T≦10S

285

325

Junction-to-Ambient Thermal Resistance

1

Steady State

355

440

T≦10S

395

460

Junction-to-Ambient Thermal Resistance

2

Steady State

465

560

Junction-to-Case Thermal Resistance

Steady State

280

320

°C / W