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2SC5614 датащи(PDF) 2 Page - California Eastern Labs

номер детали 2SC5614
подробное описание детали  NPN SILICON TRANSISTOR
PDF  2 Pages
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производитель  CEL [California Eastern Labs]
домашняя страница  http://www.cel.com
Logo CEL - California Eastern Labs

2SC5614 датащи(HTML) 2 Page - California Eastern Labs

  2SC5614 Datasheet HTML 1Page - California Eastern Labs 2SC5614 Datasheet HTML 2Page - California Eastern Labs  
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Notes:
1. Operation in excess of any one of these parameters may result
in permanent damage.
2. With device mounted on 1.08 cm2 X 1.2 mm glass epoxy board.
SYMBOLS
PARAMETERS
UNITS
RATINGS
VCBO
Collector to Base Voltage
V
20
VCEO
Collector to Emitter Voltage
V
12
VEBO
Emitter to Base Voltage
V
3
IC
Collector Current
mA
100
PT2
Total Power Dissipation
mW
140
TJ
Junction Temperature
°C
150
TSTG
Storage Temperature
°C
-65 to +150
ABSOLUTE MAXIMUM RATINGS1 (TA = 25°C)
EXCLUSIVE NORTH AMERICAN AGENT FOR
RF, MICROWAVE & OPTOELECTRONIC SEMICONDUCTORS
CALIFORNIA EASTERN LABORATORIES • Headquarters • 4590 Patrick Henry Drive • Santa Clara, CA 95054-1817 • (408) 988-3500 • Telex 34-6393 • FAX (408) 988-0279
24-Hour Fax-On-Demand: 800-390-3232 (U.S. and Canada only) • Internet: http://WWW.CEL.COM
2/09/2000
DATA SUBJECT TO CHANGE WITHOUT NOTICE
NE856M13
Collector Current, IC (mA)
FORWARD CURRENT GAIN vs.
COLLECTOR CURRENT
TYPICAL PERFORMANCE CURVES (TA = 25°C)
VCE = 10 V
1
2
3
5
7
10
20
30
50
500
300
200
100
70
50
30
20
10
Collector to Emitter Voltage, VCE (V)
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
100
20
40
60
80
0
24
8
10
12
6



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