SSRF04N65SL datasheet(2/5 Pages) SECOS

2 / 5 page

Elektronische Bauelemente

SSRF04N65SL

4A , 650V , RDS(ON) 2.7

N-Ch Enhancement Mode Power MOSFET

25-Sep-2013 Rev. A

Page 2 of 5

http://www.SeCoSGmbH.com/

Any changes of specification will not be informed individually.

ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)

Parameter

Symbol

Min.

Typ.

Max.

Unit

Teat Conditions

Static

Drain-Source Breakdown Voltage

BVDSS

650

VGS=0, ID= 250µA

Gate-Threshold Voltage

VGS(th)

VDS=VGS, ID=250µA

Gate-Source Leakage Current

IGSS

±100

VGS= ±30V

Drain-Source Leakage Current

IDSS

µA

VDS=650V, VGS=0

Static Drain-Source On-Resistance

RDS(ON)

2.3

2.7

VGS=10V, ID=2A

Total Gate Charge

1.2

8.03

Gate-Source Charge

1.2

Qgs

2.57

Gate-Drain Change

1.2

Qgd

3.03

ID=4A

VDS=520V

VGS=10V

Turn-on Delay Time

1.2

Td(on)

16.6

Rise Time

1.2

37.33

Turn-off Delay Time

1.2

Td(off)

Fall Time

1.2

19.2

VDD=325V

ID=4A

RG=25

Input Capacitance

Ciss

464

Output Capacitance

Coss

Reverse Transfer Capacitance

Crss

1.32

VGS =0

VDS=25V

f =1.0MHz

Source-Drain Diode

Diode Forward Voltage

VSD

1.4

IS=4A, VGS=0

Continuous Source Current

Pulsed Source Current

ISM

Integral Reverse P-N

Junction Diode in the

MOSFET

Reverse Recovery Time

Trr

455.23

Reverse Recovery Charge

Qrr

2.01

µC

IS=4A,VGS=0,

dlF/dt=100A/µS

Notes:

Pulse Test: Pulse width ≦300µS, Duty cycle≦2%

Essentially independent of operating temperature.

SSRF04N65SL датащи(PDF) 2 Page - SeCoS Halbleitertechnologie GmbH

SSRF04N65SL датащи(HTML) 2 Page - SeCoS Halbleitertechnologie GmbH

Html Pages

1 2 3 4 5

датащи скачать

ссылки URL