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SSPS7630N датащи(PDF) 2 Page - SeCoS Halbleitertechnologie GmbH

номер детали SSPS7630N
подробное описание детали  Dual-N Channel Mode Power MOSFET
PDF  4 Pages
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производитель  SECOS [SeCoS Halbleitertechnologie GmbH]
домашняя страница  http://www.secosgmbh.com
Logo SECOS - SeCoS Halbleitertechnologie GmbH

SSPS7630N датащи(HTML) 2 Page - SeCoS Halbleitertechnologie GmbH

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Elektronische Bauelemente
SSPS7630N
9.4 A, 30 V, RDS(ON) 19 mΩ
Ω
Ω
Ω
Dual-N Channel Mode Power MOSFET
28-Jun-2013 Rev. A
Page 2 of 4
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified)
Parameter
Symbol
Min.
Typ.
Max.
Unit
Teat Conditions
Static
Gate Threshold Voltage
VGS(th)
1
-
-
V
VDS= VGS, ID=250µA
Gate-Body Leakage Current
IGSS
-
-
±100
nA
VDS=0, VGS= ±20V
-
-
1
µA
VDS=24V, VGS=0
Zero Gate Voltage Drain Current
IDSS
-
-
25
µA
VDS=24V, VGS=0, TJ= 55°C
On-State Drain Current
1
ID(on)
15
-
-
A
VDS= 5V, VGS= 10V
-
-
19
VGS= 10V, ID= 7A
Drain-Source On-Resistance
1
RDS(ON)
-
-
28
m
VGS= 4.5V, ID=5.6A
Forward Transconductance
1
gfs
-
17
-
S
VDS= 15V, ID=7A
Diode Forward Voltage
VSD
-
0.71
-
V
IS=1A, VGS=0
Dynamic
2
Total Gate Charge
Qg
-
5.2
-
Gate-Source Charge
Qgs
-
1.7
-
Gate-Drain Charge
Qgd
-
2
-
nC
ID= 7A
VDS= 15V
VGS= 4.5V
Input Capacitance
Ciss
-
528
-
Output Capacitance
Coss
-
110
-
Reverse Transfer Capacitance
Crss
-
72
-
pF
VGS =0
VDS=15V
f =1.0MHz
Turn-On Delay Time
Td(on)
-
2
-
Rise Time
Tr
-
5
-
Turn-Off Delay Time
Td(off)
-
20
-
Fall Time
Tf
-
6
-
nS
VDS= 15V
ID= 7A
VGEN= 10V
RL= 2.1
RGEN= 6
Notes:
1.
Pulse test：PW ≦ 300µs duty cycle ≦ 2%.
2.
Guaranteed by design, not subject to production testing.



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