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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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SSPS920NE датащи(PDF) 1 Page - SeCoS Halbleitertechnologie GmbH |
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SSPS920NE датащи(HTML) 1 Page - SeCoS Halbleitertechnologie GmbH |
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1 / 4 page  Elektronische Bauelemente SSPS920NE 7.1 A, 20 V, RDS(ON) 20 mΩ Ω Ω Ω Dual-N Channel Mode Power MOSFET 28-Jun-2013 Rev. A Page 1 of 4 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free DESCRIPTION These miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management In portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones. FEATURES Low RDS(on) provides higher efficiency and extends battery life. Low thermal impedance copper leadframe SOP-8 saves board space. Fast switching speed. High performance trench technology. PACKAGE INFORMATION Package MPQ Leader Size DFN3*3-8PP 3K 13’ inch MAXIMUM RATINGS (TA = 25°C unless otherwise specified) Parameter Symbol Ratings Unit Drain-Source Voltage VDS 20 V Gate-Source Voltage VGS ±8 V TA = 25°C 7.1 A Continuous Drain Current 1 TA = 70°C ID 5.8 A Pulsed Drain Current 2 IDM 40 A Continuous Source Current (Diode Conduction) 1 IS 2.1 A TA = 25°C 1.5 W Total Power Dissipation 1 TA = 70°C PD 1 W Operating Junction & Storage Temperature Range TJ, TSTG -55 ~ 150 °C Thermal Resistance Ratings t≦10 sec 83 °C / W Thermal Resistance Junction-ambient (Max.) 1 Steady State RθJA 120 °C / W Notes: 1. Surface Mounted on 1” x 1” FR4 Board. 2. Pulse width limited by maximum junction temperature. DFN3*3-8PP Millimeter Millimeter REF. Min. Max. REF. Min. Max. A 3.0 BSC. E 0.08 0.25 B 2.8 BSC. F 2.3 BSC C 0.20 0.35 G 0.7 0.9 D 0.65 BSC. |
Аналогичный номер детали - SSPS920NE |
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Аналогичное описание - SSPS920NE |
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