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SMS2020 датащи(PDF) 1 Page - SeCoS Halbleitertechnologie GmbH |
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SMS2020 датащи(HTML) 1 Page - SeCoS Halbleitertechnologie GmbH |
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1 / 4 page ![]() Elektronische Bauelemente SMS2020 830mA, 20V N-Channel MOSFET 21-May-2013 Rev. B Page 1 of 4 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. Top View A L C B D G H J F K E 1 2 3 1 2 3 W28 = Date Code RoHS Compliant Product A Suffix of “-C” specifies halogen & lead-free DESCRIPTIONS The SMS2020 is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON)with low gate charge. This device is suitable for use in DC-DC conversion, load switch and level shift. MECHANICAL DATA Trench Technology Supper high density cell design Excellent ON resistance Extremely Low Threshold Voltage APPLICATION DC-DC converter circuit Load Switch DEVICE MARKING: PACKAGE INFORMATION Package MPQ Leader Size SOT-23 3K 7 inch MAXIMUM RATINGS (TA = 25°C unless otherwise specified) Rating Parameter Symbol 10S Steady State Unit Drain – Source Voltage VDS 20 V Gate – Source Voltage VGS ±6 V TA= 25°C 0.9 0.83 Continuous Drain Current 1 TA= 70°C ID 0.72 0.66 A TA= 25°C 0.38 0.32 Power Dissipation 1 TA= 70°C PD 0.24 0.2 W TA= 25°C 0.79 0.71 Continuous Drain Current 2 TA= 70°C ID 0.63 0.57 A TA= 25°C 0.29 0.24 Power Dissipation 2 TA= 70°C PD 0.19 0.15 W Pulsed Drain Current 3 IDM 1.4 A Maximum Junction-to-Lead RθJL 260 °C / W Operating Junction & Storage Temperature Range TJ, TSTG 150, -55~150 °C SOT-23 Millimeter Millimeter REF. Min. Max. REF. Min. Max. A 2.70 3.04 G - 0.18 B 2.10 2.80 H 0.40 0.60 C 1.20 1.60 J 0.08 0.20 D 0.89 1.40 K 0.6 REF. E 1.78 2.04 L 0.85 1.15 F 0.30 0.50 |
Аналогичный номер детали - SMS2020 |
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Аналогичное описание - SMS2020 |
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