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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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SCS70DSTN датащи(PDF) 1 Page - SeCoS Halbleitertechnologie GmbH |
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SCS70DSTN датащи(HTML) 1 Page - SeCoS Halbleitertechnologie GmbH |
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1 / 1 page  Elektronische Bauelemente SCS70DSTN 0.07 A, 70 V Silicon Epitaxial Planar Schottky Barrier Rectifiers 22-Nov-2013 Rev. B Page 1 of 1 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free DESCRIPTION Planar Schottky barrier diode with an integrated guard ring for stress protection FEATURES ● Low diode capacitance ● Low forward voltage ● Guard ring protected ● High breakdown voltage APPLICATION ● Ultra high-speed switching ● Voltage clamping ● Mobile communication ,digital (still) cameras , PDAs and PCMCIA cards MARKING PACKAGE INFORMATION Package MPQ Leader Size WBFBP-02C 10K 7 inch MAXIMUM RATINGS CHARACTERISTICS(TA=25°C unless otherwise specified) Parameter Symbol Limits Unit DC reverse voltage VR 70 V Forward continuous current IF 70 mA Peak forward surge current @ Tp< 10ms IFSM 100 mA Power Dissipation Pd 250 mW Thermal resistance junction to ambient RθJA 400 ℃ / W Junction, Storage Temperature Range TJ, TSTG 125, -55 ~ 150 ℃ ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise specified) Parameters Symbol Min. Typ. Max. Unit Test Conditions - - 0.41 IF=1mA - - 0.75 IF=10mA Forward Voltage VF - - 1 V IF=15mA - - 100 VR=50V Reverse Current 1 IR - - 500 nA VR=70V Diode capacitance Cd - 2 - pF VR = 0V, f=1.0MHz Note: 1. Pulse Test: Pulse width=300μs;Duty cycle=0.02. WBFBP-02C S5 Millimeter Millimeter REF. Min. Max. REF. Min. Max. A 0.950 1.050 G 0.275 0.325 B 0.550 0.650 H 0.275 0.325 C 0.450 0.550 J 0.275 0.325 D 0.450 REF. K 0.675 0.725 E 0.400 REF. L 0.010 0.070 F 0.275 0.325 M 0.010 REF. A C B F M M G J H K E D L |
Аналогичный номер детали - SCS70DSTN |
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Аналогичное описание - SCS70DSTN |
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