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2SC5508 датащи(PDF) 4 Page - NEC

номер детали 2SC5508
подробное описание детали  NPN SILICON RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN SUPER MINI-MOLD
PDF  16 Pages
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производитель  NEC [NEC]
домашняя страница  http://www.nec.com/
Logo NEC - NEC

2SC5508 датащи(HTML) 4 Page - NEC

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Preliminary Data Sheet P13865EJ1V0DS00
4
2SC5508
Gain Characteristics
Collector Current IC (mA)
Collector Current IC (mA)
Insertion Power Gain, Maximum Available Power Gain,
Maximum Stable Power Gain vs. Frequency
Insertion Power Gain, Maximum Available Power Gain,
Maximum Stable Power Gain vs. Collector Current
Insertion Power Gain, Maximum Available Power Gain,
Maximum Stable Power Gain vs. Collector Current
40
35
30
25
20
15
10
5
0
30
25
20
15
10
5
0
30
25
20
15
10
5
0
Frequency f (GHz)
0.1
1.0
10.0
1
10
100
1
10
100
MAG
MSG
|S21e|2
VCE = 2 V
IC = 20 mA
MSG
|S21e|2
MAG
MSG
|S21e|2
MAG
f = 2 GHz
VCE = 2 V
f = 1 GHz
VCE = 2 V
Output Characteristics
Input Power Pin (dBm)
Output Power, Collector Current vs. Input Power
20
15
10
5
0
–5
125
100
75
50
25
0
125
100
75
50
25
0
–20
–15
–10
–5
0
5
Input Power Pin (dBm)
Output Power, Collector Current vs. Input Power
20
15
10
5
0
–5
–20
–15
–10
–5
0
5
Pout
Pout
IC
IC
f = 1 GHz
VCE = 2 V
f = 2 GHz
VCE = 2 V



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