STD830CP40 datasheet(3/10 Pages) STMICROELECTRONICS

номер детали	STD830CP40

подробное описание детали	Complementary transistor pair in a single package

PDF	10 Pages

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STD830CP40

Electrical characteristics

Doc ID 15767 Rev 3

3/10

Electrical characteristics

Tcase = 25 °C unless otherwise specified.

Note:

For PNP types voltage and current values are negative

Table 4.

Electrical characteristics

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

ICES

Collector cut-off current

(VBE = 0)

For NPN:

VCE = 700 V

TC = 125°C

For PNP:

VCE = 500 V

TC = 125°C

0.1

0.5

0.1

0.5

V(BR)EBO

Emitter-base breakdown

voltage (IC = 0)

IE = 10 mA

For NPN:

For PNP:

VCEO(sus)

(1)

Pulse test: pulse duration

≤300 µs, duty cycle ≤2 %.

Collector-emitter

sustaining voltage

(IB = 0)

IC = 5 mA

400

VCE(sat)

(1)

Collector-emitter

saturation voltage

IC = 0.7 A

IB = 0.1 A

IC = 1 A

IB = 0.2 A

0.5

VBE(sat)

(1)

Base-emitter saturation

voltage

IC = 0.5 A_

_ IB = 0.1 A

IC = 1 A ____

IB = 0.2 A

1.1

1.2

hFE

(1)

DC current gain

IC = 10 mA

VCE = 5 V

IC = 0.7 A

VCE = 5 V

IC = 2 A

VCE = 5 V

Resistive load

Rise time

Storage time

Fall time

IC = 0.7 A _

VCC = 250 V

IB1 = 0.14 A_ IB2 = -0.14 A

tp = 30 µs

100

2.4

100

µs

Inductive load

Storage time

Fall time

IC = 1 A _ _

IB1 = 0.2 A

VBE(off) = -5 V

RBB = 0

Vclamp = 200 V

L = 1 mH

450

100

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