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MF70 датащи(PDF) 2 Page - Dynex Semiconductor |
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MF70 датащи(HTML) 2 Page - Dynex Semiconductor |
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2 / 8 page ![]() MF70 2/8 SURGE RATINGS Conditions Max. Units 10ms half sine; with 100% V RRM, Tj = 125 oC 700 A 10ms half sine; T j = 125 oC 2450 A 2s I 2t for fusing I 2t Surge (non-repetitive) forward current I FSM Parameter Symbol THERMAL AND MECHANICAL DATA dc Conditions Max. Units oC/W - 0.2 Thermal resistance - case to heatsink R th(c-h) Thermal resistance - junction to case R th(j-c) Mounting torque 3.5Nm with mounting compound Symbol Parameter - 0.37 oC/W Min. - 125 oC ˚C 125 -55 Storage temperature range T stg Forward (conducting) - 125 oC T vj Virtual junction temperature Reverse (blocking) Nm 3.8 3.2 - Mounting torque CHARACTERISTICS t rr 10 Symbol Typ. Units Parameter V FM Forward voltage I RM Peak reverse current Reverse recovery time - 300 ns At V RRM, Tcase = 100 oC- mA At 210A peak, T case = 25 oC - 2.0 V Conditions Max. I F = 1A, diRR/dt = 25A/µs T case = 25 oC, V R = 100V Q r Recovered charge t rr Reverse recovery time V TO Threshold voltage r T Slope resistance V FRM Forward recovery voltage di/dt = 1000A/ µs, T j = 125 oC80 - V At T vj = 125 oC - 3.34 m Ω At T vj = 125 oC - 1.3 V - 915 ns -26 µC I F = 100A, diRR/dt = 100A/µs T case = 25 oC, V R = 100V Use torque wrench |
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